The Loading Effect in Plasma Etching

Journal of the Electrochemical Society

Volumn 124, Issue 8, 1977, Pages 1262-1268

  Mogab, C J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

CF4O2; etch rate; etching end point detecation; reactor; silicon; silicon dioxide

Indexed keywords

PLASMAS;

ETCHING;

EID: 0017526342     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2133542     Document Type: Article

References (10)

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3. W.R. Harshbarger, T.A. Miller, P. Norton, and R.A. Porter, Paper presented at Interface ′76- Kodak Microelectronics Seminar, Monterrey, California, October 4, 1976.
4. A.R. Reinberg, Paper 6 presented at The Electrochemical Society Meeting, San Francisco, California, May 12-17, 1974; U.S. Pat. 3, 757, 733.
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10. W.R. Harshbarger and R.A. Porter, Private communication.