Modelling the 3rd-order intermodulation-distortion properties of a gaas F.E.T.

Electronics Letters

Volumn 13, Issue 17, 1977, Pages 508-510

  Tucker, R S ^a   Rauscher, C ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

Intermodulation; Schottky barrier field effect transistors

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0017523981     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770370     Document Type: Article

References (3)

1. KHADR, A. M., and JOHNSTON, R. H.: ‘Distortion in high frequency FET amplifiers’, IEEE J. Solid State Circuits, 1974, SC-9, pp. 180-189
2. HEITER, G. L.: ‘Characterization of nonlinearities in microwave devices and systems’, IEEE Trans., 1973, MTT-21, pp. 797-805
3. RAUSCHER, C., and TUCKER, R. S.: ‘A method for measuring intermodulation distortion in GaAs FETs’ (in preparation)