A Simple Model for Short Channel MOSFET's

Proceedings of the IEEE

Volumn 65, Issue 8, 1977, Pages 1212-1213

  Fukuma, Masao ^a   Matsumura, Masakiyo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SHORT CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MIS;

TRANSISTORS, FIELD EFFECT;

EID: 0017523140     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/PROC.1977.10676     Document Type: Article

References (3)

1. D.P. Kennedy and P.C. Murley, “Steady state mathematical theory for the insulated gate field effect transistor,” IBM J. Res. Develop., vol. 17, pp. 2-12, Jan. 1973, and L.D. Yau, “Simple I/V model for short-channel IGFET's in the triode region,” Elec. Lett., vol. 11, pp. 44–45, Jan. 1975.
2. L.D. Yau, “A simple theory to predict the threshold voltage of short-channel IGFET's,” Solid-State Elec., vol. 17, pp. 1059–1063, Oct. 1974.
3. R.H. Dennard et al., “Design of ion-implanted MOSFET's with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 256–268, Oct. 1974.