CMOS Analog Integrated Circuits Based on Weak Inversion Operation

IEEE Journal of Solid-State Circuits

Volumn 12, Issue 3, 1977, Pages 224-231

  Vittoz, Eric ^a   Fellrath, Jean ^a  

^a Centre Electronique Horloger   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

MOS TRANSISTORS;

INTEGRATED CIRCUITS;

EID: 0017503796     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1977.1050882     Document Type: Article

References (14)

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3. R. R. Troutman and S. N. Chakravarti, “Subthreshold characteristics. of insulated-gate field-effect transistors,” IEEE. Trans. Circuit Theory, vol. CT-20, pp. 659–665, Nov. 1973.
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10. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969, ch. 9.
11. R. J. Van Overstraeten et al., “Theory of the MOS transistor in weak inversion―new method to determine the number of surface states,” IEEE Trans. Electron Devices, vol. ED-22, pp. 282–288, May 1975.
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13. L. P. Hunter, Handbook of Semiconductor Electronics. New York: McGraw-Hill, 1970, pp. 10–17.
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