High Sensitivity Charge Transfer Sense Amplifier

IEEE Journal of Solid-State Circuits

Volumn 11, Issue 5, 1976, Pages 596-601

  Heller, Lawrence G ^a   Spampinato, Dominic P ^b   Yao, Ying L ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR;

DATA STORAGE, DIGITAL;

EID: 0017012361     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1976.1050808     Document Type: Article

References (10)

1. K. U. Stein, A. Sihling, and E. Doering, Storage array and sense/refresh circuit for single transistor memory cells, IEEE J. Solid State Circuits, vol. SC-7, pp. 336–340, Oct. 1972.
2. W. T. Lynch and H. J. Boll, Optimization of the latching pulse for dynamic flip flop sensors, IEEE J. Solid State Circuits, vol. SC-9, pp. 49–55, Apr. 1974.
3. L. G. Heller, Stored charge detection by charge transfer, U.S. Patent 3764906, Oct. 9, 1973.
4. L. G. Heller, D. P. Spampinato, and Y. L. Yao, High sensitivity Charge Transfer sense amplifier, in ISSCC Dig. Tech. Papers, Feb. 1975, pp. 112–113.
5. Y. L. Yao, Stored charge memory detection circuit, U.S. Patent 3760381, Sept. 18, 1973.
6. F. L. J. Sangster and K. Teer, Bucket brigade electronics New possibilities for delay, time axis conversion, and scanning, IEEE J. Solid State Circuits, vol. SC-4,pp. 131–136, June 1969.
7. L. G. Heller and H. S. Lee, “Digital signal transfer in charge transfer devices”, IEEE J. Solid State Circuits, vol. SC-8, pp. 116–125, Apr. 1973.
8. H. S. Lee, Analysis of threshold voltage for short channel IGFETs, Solid State Electron., vol. 16, pp. 1407–1417, Dec. 1973.
9. L. G. Heller and H. S. Lee, Charge Transfer device modeling, in Semiconductor Silicon 1973. Princeton, NJ: Electrochemical Society, May 1973, pp. 814–825.
10. R. H. Dennard, F. H. Gaensslen, L. Kuhn, and H. N. Yu, Design of micron MOS switching devices, presented at the 1972 Int. Electron Devices Meeting, Washington, DC.