Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal-Insulator-Semiconductor Devices

Journal of the Electrochemical Society

Volumn 123, Issue 10, 1976, Pages 1570-1573

  Kaplan, E ^a   Balog, M ^a   Frohman Bentchkowsky, D ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

chemical vapor deposition; insulator conduction mechanism; MIS; tantalum pentoxide

Indexed keywords

FILMS - DIELECTRIC; TANTALUM COMPOUNDS - THIN FILMS;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017006618     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2132639     Document Type: Article

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