Study of the sputtering process with Rutherford backscattering

Nuclear Instruments and Methods

Volumn 137, Issue 3, 1976, Pages 553-557

  Krautle H ^a  

^a MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SPUTTERING;

EID: 0016995723     PISSN: 0029554X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0029-554X(76)90475-4     Document Type: Article

References (14)

1. Model calculations of profiles and dose of high dose ion implants influenced by sputtering
2. Study of the annealing behaviour of high dose implants in silicon and germanium crystals
3. Energy Spectra of keV Backscattered Protons as a Probe for Surface-Region Studies
4. Quantitative analysis with electron microprobes and secondary ion mass spectrometry
5. Sputtering experiments in the high energy region