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Volumn 23, Issue 8, 1976, Pages 851-857

Second Breakdown in Power Transistors Due to Avalanche Injection

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0016988719     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1976.18498     Document Type: Article
Times cited : (37)

References (19)
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  • 2
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  • 3
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    • H. A. Schefft, “Second breakdown—A comprehensive review,” Proc. IEEE, vol. 55, Aug. 1967.
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    • Schefft, H.A.1
  • 4
    • 84892077899 scopus 로고
    • Secondary breakdown and hot spots in power transistors
    • Part 3
    • R. M. Scarlett and W. Shockley, “Secondary breakdown and hot spots in power transistors,” in IEEE Int. Conv. Rec., Part 3, 1963.
    • (1963) IEEE Int. Conv. Rec.
    • Scarlett, R.M.1    Shockley, W.2
  • 6
    • 0014766404 scopus 로고
    • Avalanche injection and second breakdown in transistors
    • Apr.
    • P. L. Hower and V. G. K. Reddi, “Avalanche injection and second breakdown in transistors,” IEEE Trans. Electron Devices, vol. ED-17, Apr.1970.
    • (1970) IEEE Trans. Electron Devices , vol.ED-17
    • Hower, P.L.1    Reddi, V.G.K.2
  • 7
    • 0015604544 scopus 로고
    • Second breakdown of transistors during inductive turn off
    • Mar.
    • S. Krishna and P. L. Hower, “Second breakdown of transistors during inductive turn off,” Proc. IEEE, vol, 61, Mar, 1973.
    • (1973) Proc. IEEE , vol.61
    • Krishna, S.1    Hower, P.L.2
  • 8
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    • Second breakdown: Hot spots or hot cylinders
    • Aug.
    • S. Krishna and P. V. Gray, “Second breakdown: Hot spots or hot cylinders.” Proc.IEEE. vol. 62, Aug. 1974.
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    • Krishna, S.1    Gray, P.V.2
  • 9
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    • Thermisch Bedingte Stromein-Schnurung Bei Hochfrequenz-Leistungstransistoren (Ein Beitreg zum Problem des Second Breakdown)
    • F. Bergmann and D. Gerstner, “Thermisch Bedingte Stromein-Schnurung Bei Hochfrequenz-Leistungstransistoren (Ein Beitreg zum Problem des Second Breakdown),” Arch Eleckt Ubertragung, vol. 17, Oct. 1963.
    • (1963) , vol.17
    • Bergmann, F.1    Gerstner, D.2
  • 10
    • 0042351022 scopus 로고
    • Secondary breakdown in transistors
    • Apr.
    • H. Melchior and M. J,. O. Strutt, “Secondary breakdown in transistors.” Proc., IEEE. vol. 52, Apr. 1964.
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    • Melchior, H.1    Strutt, M.J.O.2
  • 11
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    • Mesoplasma breakdown in silicon junctions
    • Mar.
    • A. C. English and H. M. Power, “Mesoplasma breakdown in silicon junctions.” Proc. IEEE. vol. 51. Mar. 1963.
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    • English, A.C.1    Power, H.M.2
  • 12
    • 35148815587 scopus 로고
    • Pulse. power failure modes in semiconductors
    • Dec.
    • D. M. Tasca, “Pulse. power failure modes in semiconductors,” IEEE Trans. Nuc. Sci., vol. NS-17. Dec. 1970.
    • (1970) IEEE Trans. Nuc. Sci , vol.NS-17
    • Tasca, D.M.1
  • 13
    • 0015376080 scopus 로고
    • Second breakdown phenomena in avalanching silicon-on-sapphire diodes
    • July
    • A. Sunshine and M. A. Lampert, “Second breakdown phenomena in avalanching silicon-on-sapphire diodes,” IEEE Trans. Electron Devices. vol. ED-19. July 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19
    • Sunshine, A.1    Lampert, M.A.2
  • 15
    • 84938440121 scopus 로고
    • Investigation of reverse bias second breakdown in power transistors
    • Massachusetts Institute of Technology, Cambridge, May
    • T. M. Jahns, “Investigation of reverse bias second breakdown in power transistors,” M. S. Thesis, Massachusetts Institute of Technology. Cambridge, May 1974.
    • (1974)
    • Jahns, T.M.1    Thesis, M.S.2
  • 16
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    • The saturation characteristics of high voltage transistors
    • Aug.
    • L. A. Hahn: “The saturation characteristics of high voltage transistors.” Proc. IEEE. vol. 55, PP. 1384–1388, Aug. 1967.
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    • Hahn, L.A.1
  • 17
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    • Safe operating conditions for Power transistors
    • JEDEC Suggested Standard on Power Transistors, part 3, May
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    • (1973) , vol.JC-25
  • 18
    • 0014778389 scopus 로고
    • R. Van Overstraeten and H. De Man, Solid-State Electron., vol. 13.00, pp.583-608, 1970;
    • (1970) , vol.13 , pp. 583-608
    • Van, R.1    DeMan, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.