Deep-diode arrays

Journal of Applied Physics

Volumn 47, Issue 6, 1976, Pages 2550-2557

  Anthony, T R ^a   Cline, H E ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR DIODES;

EID: 0016964339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.322973     Document Type: Article

References (81)

1. U.S. Patent No. 3,011,039
2. of General Electric Research and Development Center, Schenectady, N.Y., suggested the deep-diode array geometry for imaging x-rays and infrared.
3. of General Electric Research and Development Center, Schenectady, N.Y., brought this problem to our attention.
4. U.S. Patent No. 2,770,761
5. U.S. Patent No. 2,813,048
6. U.S. Patent No. 3,895,967
7. U.S. Patent No. 3,898,106
8. U.S. Patent No. 3,899,361
9. U.S. Patent No. 3,899,362
10. U.S. Patent No. 3,901,736
11. U.S. Patent No. 3,902,925
12. U.S. Patent No. 3,904,442
13. This possibility was pointed out to the authors by W. H. Berninger of the General Electric Research and Development Center.