Transparent Metal Oxide Electrode CID Imager

IEEE Transactions on Electron Devices

Volumn 23, Issue 2, 1976, Pages 196-200

  Brown, Dale M ^a   Ghezzo, Mario ^a   Garfinkel, Marvin ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION DEVICES;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0016920972     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1976.18374     Document Type: Article

References (9)

1. R. W. Brown and S. G. Chamberlain, “Quantum efficiency of a silicon gate charge-coupled optical imaging array,” Phys. Status Solidi. vol. 20. pp.675–685, 1973.
2. S. R. Shortes, W. W. Chan, W. C. Rhines, J. B. Barton, and D, R. Collins, “Characteristics of thinned backside-illuminated Chrge coupled device imagers,” Appl. Phys. Lett., vol. 24, pp. 565-567, 1974.
3. W. C. Dash and R. Newman, “Intrinsic optical absorption in single crystal Ge and Si at 77°K and 300°K,” Phys. Rev., vol. 99, pp. 1151–1155, 1955
4. H. R. Philipp, “Influence of oxide layers on the determination of the optical properties of silicon,” J. Appl. Phys., vol. 43, pp. 2835–2839, 1972.
5. C. H. Séquin F. J. Morris, T. A. Shankoff, M. F. Tompsett, and E. J. Zimany, Jr., “Charge-coupled area image sensor using three levels of polysilicon,” IEEE Trans. Electron Devices, vol. ED-22., pp. 712–720. Nov. 1974.
6. H. K. Müller, “Electrical and optical properties of sputt:ed In2O3 films,” Phys. Status Solidi, vol. 27, pp. 723–731, 1968.
7. J. L. Vossen, “RF sputtered transparent conductors the system In 2O3-SnO2,” RCA Rev., vol. 32, pp. 289–295, 1971.
8. G. J. Michon and H. K. Burke, “Charge injection imaging,” in ISSCC Dig. Tech. Papers, Feb. 1973, pp. 138–139.
9. D. M. Brown, M. Ghezzo, and M. Garfinkel, “Transparent metal oxide electrode CID imager array,” in ISSCC Dig. Tech. Papers, Feb. 1975, pp. 34–35.