High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surface

Journal of Applied Physics

Volumn 47, Issue 1, 1976, Pages 248-255

  Weinberg, Z A ^a   Johnson, W C ^a   Lampert, M A ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICA - THIN FILMS;

ELECTRIC INSULATING MATERIALS;

EID: 0016883932     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.322307     Document Type: Article

References (16)

1. It is the experience of many workers that when holes are generated in silicon dioxide, for example by exposure to ionizing radiation, a positive charge buildup caused by strong hole trapping is observed. See, for example