Subthreshold Slope for Insulated Gate Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 22, Issue 11, 1975, Pages 1049-1051

  Troutman, R R ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016569911     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1975.18269     Document Type: Article

References (3)

1. R. R. Troutman and S. N. Chakravarti, “Subthreshold characteristics of insulated gate field-effect transistors,” IEEE Trans. Circuit Theory, vol. CT-20, pp. 659-665), Nov. 1973.
2. R. R. Troutman, “Subthreshold design considerations for insulated gate field-effect transistors,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 55–60, Apr. 1974.
3. H. F. Wolf, Silicon Semiconductor Data. Elmsford, N. Y.: Pergamon Press, 1969, p. 178.