Influence of an Oxidizing Annealing Ambient on the Distribution of As, Sb, and Ga Implanted into Silicon

Journal of the Electrochemical Society

Volumn 122, Issue 9, 1975, Pages 1234-1238

  Muller H ^a   Gyulai, J ^b   Chu, W K ^c   Mayer, J W ^c   Sigmon, T W ^d  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

ion implantation; oxidizing anneal ambient; redistribution of dopants

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0016557012     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2134432     Document Type: Article

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