Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators

IEEE Transactions on Microwave Theory and Techniques

Volumn 23, Issue 6, 1975, Pages 461-469

  Liechti, Charles A ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016520573     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1975.1128602     Document Type: Article

References (32)

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