First-order theory of MOSFET hybrid-mode operation

International Journal of Electronics

Volumn 38, Issue 5, 1975, Pages 625-630

  Hart, B L ^a   Barker, R W J ^b  

^a UNIVERSITY OF EAST LONDON   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

MOSFET;

TRANSISTORS, FIELD EFFECT;

EID: 0016508537     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/00207217508920436     Document Type: Article

References (4)

1. Cobbold, R., 1970, Theory and Applications oj Field-Effecl Transistors (J. Wiley & Sons), p. 283.
2. Crawford, R. H., 1967, MOSFET in Circuit Design (McGraw-Hill), p. 44.
3. Grovb, A. S., 1967, Physics and Technology of Semiconductor Devices(J. Wiley & Sons), p. 267..
4. Grove, A. S., Deal,A. S., Snow, E. H., and Sah, C. T., 1965, Solid St. Electron., 8, 145.