Influence of the floating substrate potential on the characteristics of ESFI MOS transistors

Solid State Electronics

Volumn 18, Issue 4, 1975, Pages 309-314

  Tihanyi, Jenö ^a   Schlötterer, Heinrich ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

EPITAXIAL SILICON FILMS ON INSULATORS; ESFI MOS TRANSISTORS;

TRANSISTORS;

EID: 0016496304     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(75)90083-0     Document Type: Article

References (7)

1. Avalanche Breakdown in Silicon