Simple Theoretical Estimates of the Schottky Constants and Virtual-Enthalpies of Single Vacancy Formation in Zinc-Blende and Wurtzite Type Semiconductors

Journal of the Electrochemical Society

Volumn 122, Issue 3, 1975, Pages 419-422

  Van Vechten, J A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

CdS; defects; GaP; nonradiative recombination; stoichiometry

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0016484891     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2134226     Document Type: Article

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