NEW TECHNIQUE FOR DEFECT SPECTROSCOPY IN SEMICONDUCTORS: APPLICATION TO 1 MeV ELECTRON-IRRADIATED n-GaAs.

Volumn , Issue , 1975, Pages 581-588

  Lang, D V ^a   Kimerling, L C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS - DEFECTS; SPECTROSCOPY;

GALLIUM ARSENIDE;

SEMICONDUCTOR MATERIALS;

EID: 0016443714     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (17)