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1
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0014764318
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Charge coupled semiconductor devices
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W. S. Boyle and G. E. Smith “Charge coupled semiconductor devices,” Bell Syst Tech. J., vol. 49, pp. 587–593, 1970.
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(1970)
Bell Syst Tech. J.
, vol.49
, pp. 587-593
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Boyle, W.S.1
Smith, G.E.2
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2
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0015159103
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Charge-coupled imaging devices: Design considerations
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Nov.
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G. F. Amelio, W. J. Bertram, Jr., and M. F. Tompsett “Charge-coupled imaging devices: Design considerations,” IEEE Trans. Electron Devices, vol. ED-18, pp. 986–992, Nov. 1971.
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(1971)
IEEE Trans. Electron Devices
, vol.ED-18
, pp. 986-992
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Amelio, G.F.1
Bertram, W.J.2
Tompsett, M.F.3
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3
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84939004451
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Buried-channel charge-coupled devices
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Proc. 1972 NEREM Conf., in
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C. K. Kim, J. M. Early, and G. F. Amelio, “Buried-channel charge-coupled devices,” in Proc. 1972 NEREM Conf., pp. 161–164.
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Kim, C.K.1
Early, J.M.2
Amelio, G.F.3
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4
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0015640011
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Charge transfer in overlapping gate charge-coupled devices
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June
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A. M. Mohsen, T. C. McGill, and C. A. Mead “Charge transfer in overlapping gate charge-coupled devices,” IEEE J. Solid-State Circuits, vol. SC-8, pp. 191–207, June 1973.
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(1973)
IEEE J. Solid-State Circuits
, vol.SC-8
, pp. 191-207
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Mohsen, A.M.1
McGill, T.C.2
Mead, C.A.3
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6
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0015974607
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The peristaltic charge-coupled device for high speed charge transfer
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Proc. 1974 IEEE Solid State Circuits Conf., in
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L. J. M. Esser, “The peristaltic charge-coupled device for high speed charge transfer,” in Proc. 1974 IEEE Solid State Circuits Conf., pp. 28–29.
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Esser, L.J.M.1
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7
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0015481573
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Characterization of thin-oxide MNOS memory transistors
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Dec.
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M. H. White and J. R. Cricchi “Characterization of thin-oxide MNOS memory transistors,” IEEE Trans. Electron Devices, vol. ED-19, pp. 1280–1288, Dec. 1972.
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(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 1280-1288
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White, M.H.1
Cricchi, J.R.2
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8
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0010634057
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Fast interface-state losses in charge-coupled devices
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J. E. Carnes and W. F. Kosonocky “Fast interface-state losses in charge-coupled devices,” Appl. Phys. Lett., vol. 20, pp. 261–263, 1972.
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(1972)
Appl. Phys. Lett.
, vol.20
, pp. 261-263
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Carnes, J.E.1
Kosonocky, W.F.2
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9
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0016048925
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Charge-coupled devices and applications
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J. E. Carnes and W. F. Kosonocky “Charge-coupled devices and applications,” Solid State Technol., vol. 17, pp. 67–77, 1974.
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(1974)
Solid State Technol.
, vol.17
, pp. 67-77
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Carnes, J.E.1
Kosonocky, W.F.2
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10
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0015372732
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Charge transfer devices
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M. F. Tompsett “Charge transfer devices,” J. Vac. Sci. Technol., vol. 9, pp. 1166–1181, 1972.
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(1972)
J. Vac. Sci. Technol.
, vol.9
, pp. 1166-1181
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Tompsett, M.F.1
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11
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0015094978
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Linearized dispersion relation and Green's function for discrete-charge-transfer devices with incomplete transfer
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W. B. Joyce and W. J. Bertram “Linearized dispersion relation and Green's function for discrete-charge-transfer devices with incomplete transfer,” Bell Syst. Tech. J., vol. 50, pp. 1741–1759, 1971.
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(1971)
Bell Syst. Tech. J.
, vol.50
, pp. 1741-1759
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Joyce, W.B.1
Bertram, W.J.2
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12
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0015412704
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Properties of an idealized traveling-wave charge-coupled device
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Oct.
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R. J. Strain “Properties of an idealized traveling-wave charge-coupled device,” IEEE Trans. Electron Devices, vol. ED-19, pp. 1119–1130, Oct. 1972.
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(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 1119-1130
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Strain, R.J.1
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13
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84937654286
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Advanced scanner and imaging systems for earth observations
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NASA Ref. SP-335
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“Advanced scanner and imaging systems for earth observations,” NASA Ref. SP-335, pp. 239–264, 1972.
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(1972)
, pp. 239-264
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14
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0016025773
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Electrical characteristics of 500-bit Al-Al2O3-Al CCD shift registers
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Feb.
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D. R. Collins et al. “Electrical characteristics of 500-bit Al-Al2O3-Al CCD shift registers,” Proc. IEEE (Lett.), vol. 62, pp. 282–284, Feb. 1974.
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(1974)
Proc. IEEE (Lett.)
, vol.62
, pp. 282-284
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Collins, D.R.1
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15
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84939760145
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Techniques for introducing a low noise fat zero in CCD's
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presented at the 1973 IEEE Device Res. Conf., Boulder, Colo.
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S. P. Emmons and D. D. Buss, “Techniques for introducing a low noise fat zero in CCD's,” presented at the 1973 IEEE Device Res. Conf., Boulder, Colo.
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-
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Emmons, S.P.1
Buss, D.D.2
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16
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0016027413
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Characterization of surface channel CCD imaging arrays at low light levels
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Feb.
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M. H. White, D. R. Lampe, F. C. Blaha, and I. A. Mack “Characterization of surface channel CCD imaging arrays at low light levels,” IEEE Trans. Solid-State Circuits, vol. SC-9, pp. 1–13, Feb. 1974.
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(1974)
IEEE Trans. Solid-State Circuits
, vol.SC-9
, pp. 1-13
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White, M.H.1
Lampe, D.R.2
Blaha, F.C.3
Mack, I.A.4
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17
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84946965716
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Analysis and design of a single stage floating gate amplifier
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presented at the 1973 IEEE Solid State Circuits Conf., Philadelphia, Pa.
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D. D. Wen and P. J. Salsbury, “Analysis and design of a single stage floating gate amplifier,” presented at the 1973 IEEE Solid State Circuits Conf., Philadelphia, Pa.
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Wen, D.D.1
Salsbury, P.J.2
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18
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0015346884
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Noise sources in charge-coupled devices
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J. E. Carnes and W. F. Kosonocky “Noise sources in charge-coupled devices,” RCA Rev., vol. 33, pp. 327–343, 1972.
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(1972)
RCA Rev.
, vol.33
, pp. 327-343
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Carnes, J.E.1
Kosonocky, W.F.2
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19
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84975623486
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Noise and distortion considerations in charge-coupled devices
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D. F. Barbe “Noise and distortion considerations in charge-coupled devices,” Electron. Lett., vol. 8, pp. 207–208, 1972.
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(1972)
Electron. Lett.
, vol.8
, pp. 207-208
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Barbe, D.F.1
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20
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84938019906
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Theory of bulk trapping in buried-channel CCD's near −50°C for levels below 100 electrons
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presented at the 1974 Device Res. Conf., Santa Barbara, Calif.
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J. M. Early, “Theory of bulk trapping in buried-channel CCD's near −50°C for levels below 100 electrons,” presented at the 1974 Device Res. Conf., Santa Barbara, Calif.
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Early, J.M.1
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21
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84941532202
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Charge coupled devices for low light level imaging
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Proc. 1973 CCD Applications Conf., in
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S. B. Campana, “Charge coupled devices for low light level imaging,” in Proc. 1973 CCD Applications Conf., pp. 235–245.
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Campana, S.B.1
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22
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0016071117
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Characteristics of thinned backside-illuminated charge-coupled device imagers
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S. R. Shortes, W. W. Chan, W. C. Rhines, J. B. Barton, and D. R. Collins “Characteristics of thinned backside-illuminated charge-coupled device imagers,” Appl. Phys. Lett., vol. 24, pp. 565–567, 1974.
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(1974)
Appl. Phys. Lett.
, vol.24
, pp. 565-567
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Shortes, S.R.1
Chan, W.W.2
Rhines, W.C.3
Barton, J.B.4
Collins, D.R.5
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23
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84948606133
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Moving target sensors
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Navy Contract N00039-73-C-0070, Final Rep.
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“Moving target sensors,” Texas Instruments, Navy Contract N00039-73-C-0070, Final Rep., 1973.
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(1973)
Texas Instruments
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-
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24
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0015699856
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Interlacing in charge-coupled devices
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June
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C. H. Séquin “Interlacing in charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-20, pp. 535–541, June 1973.
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(1973)
IEEE Trans. Electron Devices
, vol.ED-20
, pp. 535-541
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Séquin, C.H.1
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25
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84977699567
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The silicon diode array camera diode
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M. H. Crowell and E. F. Labuda “The silicon diode array camera diode,” Bell Syst. Tech. J., vol. 48, pp. 1481–1528, 1969.
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(1969)
Bell Syst. Tech. J.
, vol.48
, pp. 1481-1528
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Crowell, M.H.1
Labuda, E.F.2
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26
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0016034239
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Carrier diffusion degradation of modulation transfer function in charge coupled imagers
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Mar.
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D. H. Seib “Carrier diffusion degradation of modulation transfer function in charge coupled imagers,” IEEE Trans. Electron Devices, vol. ED-21, pp. 210–217, Mar. 1974.
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(1974)
IEEE Trans. Electron Devices
, vol.ED-21
, pp. 210-217
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Seib, D.H.1
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27
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84948591168
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Low-light level charge-coupled imaging devices
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Fairchild, Navy Contract N00039-73-C-0015, Final Rep. on Phase I, pp. B-1–B-20, also DDC AD 915544
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“Low-light level charge-coupled imaging devices,” Fairchild, Navy Contract N00039-73-C-0015, Final Rep. on Phase I, pp. B-1–B-20, 1973; also DDC AD 915544.
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(1973)
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28
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84948614212
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presented at the CCD Applications Conf., Edinburgh, Scotland, Sept.
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S. B. Campana and D. F. Barbe, presented at the CCD Applications Conf., Edinburgh, Scotland, Sept. 1974.
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(1974)
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Campana, S.B.1
Barbe, D.F.2
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29
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84948610553
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A sampling mode surveillance system using the CID imager
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presented at the IEEE Int. Conf., New York, N.Y., Mar
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J. M. Hooker, “A sampling mode surveillance system using the CID imager,” presented at the IEEE Int. Conf., New York, N.Y., Mar 1974
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(1974)
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Hooker, J.M.1
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30
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84948594987
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Effects of gamma radiation on charge-coupled devices
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presented at the GOMAC Conf., Boulder, Colo., June
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J. M. Killiany, N. S. Saks, W. D. Baker, and D. F. Barbe, “Effects of gamma radiation on charge-coupled devices,” presented at the GOMAC Conf., Boulder, Colo., June 1974.
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(1974)
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Killiany, J.M.1
Saks, N.S.2
Baker, W.D.3
Barbe, D.F.4
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31
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36849110078
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Effects of gamma radiation on charge-coupled devices
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D. F. Barbe, J. M. Killiany, and H. L. Hughes “Effects of gamma radiation on charge-coupled devices,” Appl. Phys. Lett., vol. 23, pp. 400–402, 1973.
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(1973)
Appl. Phys. Lett.
, vol.23
, pp. 400-402
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Barbe, D.F.1
Killiany, J.M.2
Hughes, H.L.3
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32
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0016059321
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Effects of gamma radiation on buried-channel CCD's with doped polysilicon gates and undoped polysilicon interelectrode isolation
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J. M. Killiany, N. S. Saks, W. D. Baker, and D. F. Barbe “Effects of gamma radiation on buried-channel CCD's with doped polysilicon gates and undoped polysilicon interelectrode isolation,” Appl. Phys. Lett., vol. 24, pp. 506–508, 1974.
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(1974)
Appl. Phys. Lett.
, vol.24
, pp. 506-508
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Killiany, J.M.1
Saks, N.S.2
Baker, W.D.3
Barbe, D.F.4
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33
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84939383630
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Design and performance of charge-coupled device time division multiplexers
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Proc. 1973 CCD Applications Conf., in
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T. F. Cheek, A. F. Tasch, J. B. Barton, S. P. Emmons, and J. E. Schroeder, “Design and performance of charge-coupled device time division multiplexers,” in Proc. 1973 CCD Applications Conf., pp. 127–139.
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-
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Cheek, T.F.1
Tasch, A.F.2
Barton, J.B.3
Emmons, S.P.4
Schroeder, J.E.5
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34
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84915009889
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Buried-channel charge coupled devices for infrared applications
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Proc. 1973 CCD Applications Conf., in
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D. M. Erb and K. Nummedal, “Buried-channel charge coupled devices for infrared applications,” in Proc. 1973 CCD Applications Conf., pp. 157–167.
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-
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Erb, D.M.1
Nummedal, K.2
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35
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0016352683
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Interface properties of InSb MIS structures
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Dec.
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J. C. Kim “Interface properties of InSb MIS structures,” IEEE Trans. Parts, Hybrids, and Packag. (Special Issue on Materials), vol. PHP-10, pp. 200–207, Dec. 1974.
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(1974)
IEEE Trans. Parts, Hybrids, and Packag. (Special Issue on Materials)
, vol.PHP-10
, pp. 200-207
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Kim, J.C.1
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36
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84948612166
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InSb surface charge-injection imaging devices
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presented at the 22nd IRIS Meeting.
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J. C. Kim, W. E. Davem, and T. Shepelavy, “InSb surface charge-injection imaging devices,” presented at the 22nd IRIS Meeting.
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-
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Kim, J.C.1
Davem, W.E.2
Shepelavy, T.3
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