The Effects of Bulk Traps on the Performance of Bulk Channel Charge-Coupled Devices

IEEE Transactions on Electron Devices

Volumn 21, Issue 11, 1974, Pages 701-712

  Mohsen, Amr M ^a   Tompsett, Michael F ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-COUPLED DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0016128631     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1974.17997     Document Type: Article

References (18)

1. R. H. Walden et al., “A buried channel charge coupled device,” Bell Syst. Tech. J., vol. 51, pp. 1635–1640, 1972.
2. M. F. Tompsett, “The quantitative effects of interface states on the performance of charge coupled devices,” IEEE Trans. Electron Devices, vol. ED-20, pp. 45–55, Apr. 1973.
3. J. E. Carnes and W. F. Kosonocky, “Fast interface states losses in charge coupled devices,” Appl. Phys. Lett., vol. 20, pp. 261–263 1972.
4. A. M. Mohsen, T. C. McGill, Y. Daimon, and C. A. Mead, “The influence of interface states on incomplete charge transfer in overlapping gates charge coupled devices,” IEEE J. Solid-State Circuits, vol. SC-8, 125–138, Apr. 1973.
5. A. M. Mohsen, M. F. Tompsett, C. H. Sequin, “Noise measurements in charge-coupled devices,” to be published.
6. W. J. Bertram et al., “A three-level metallization three-phase CCD,” to be published.
7. L. J. M. Esser, “The peristaltic charge coupled device: a new type of charge-transfer device,” Electron. Lett., vol. 8, pp. 620–621, 1972.
8. W. Shockley and W. T. Read, “Statistics of recombination of holes and electrons,” Phys. Rev., vol. 87, p. 835, 1952.
9. A. M. Mohsen, R. W. Bower, T. C. McGill, and T. A. Zimmerman, “Overlapping gates buried channel and charge-coupled devices,” Electron. Lett., vol. 9, pp. 396–397, 1973.
10. A. M. Mohsen, T. C. McGill, and C. A. Mead, “Charge transfer in overlapping gate charge coupled devices,” IEEE J. Solid-State Circuits, vol. SC-8, pp. 191–207, June 1973.
11. Y. Daimon, A. M. Mohsen, and T. C. McGill, “Charge transfer in buried channel charge coupled devices,” ISSC Digest of Technical Papers, Feb. 1974, pp. 146–147.
12. W. H. Kent, “Charge distribution in buried channel charge-coupled devices,” Bell Syst. Tech. J., vol. 52, pp. 1009–1023, 1973.
13. K. K. Thornber and M. F. Tompsett, “Spectral density of noise generated in CCD’s,” IEEE Trans. Electron Devices, vol. ED-20, p. 456, Apr. 1973.
14. K. K. Thornber, “Noise suppression in charge transfer devices,” Proc. IEEE, vol. 60, pp. 1113–1114, Sept. 1972.
15. A. M. Mohsen and F. J. Morris, “Characterization of bulk transfer charge-coupled devices from MOS Capacitors and MOS transistors,” to be published.
16. D. D. Wen and P. J. Salsbury, “Analysis and design of a single-stage floating gate amplifier,” ISSCC Digest of Technical Papers, Feb. 1973, pp. 154–155.
17. M. H. White, D. R. Lampe, I. A. Mack, and B. C. Blaha, “Characterization of charge-coupled device line and area array imaging at low light levels,” ISSCC Digest of Technical Papers, Feb. 1973, pp. 134–135.
18. L. J. Esser, “The peristaltic charge-coupled device for high speed charge transfer,” ISSCC Digest of Technical Papers, Feb. 1974, pp. 28–29.