Annealing properties of ion-implanted p-n junctions in silicon

Journal of Applied Physics

Volumn 45, Issue 7, 1974, Pages 2991-2996

  Michel, A E ^a   Fang, F F ^b   Pan, E S ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

SEMICONDUCTOR DEVICES;

EID: 0016081795     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1663714     Document Type: Article

References (10)

1. Ref. 1
2. Ref. 1