Time-dependent polarization of CdTe gamma-ray detectors

Nuclear Instruments and Methods

Volumn 117, Issue 1, 1974, Pages 267-271

  Bell, R O ^a   Entine, G ^a   Serreze, H B ^a  

^a TYCO TELECOMMUNICATIONS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR COUNTERS;

GAMMA RAYS;

EID: 0016059854     PISSN: 0029554X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0029-554X(74)90408-X     Document Type: Article

References (9)

1. Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectors
2. Halogen-doped Cadmium Telluride for Detection of Gamma Rays
3. Recent Advances in the Preparation of CdTe for Nuclear Detectors
4. +N step junctions
5. Currents Induced by Electron Motion
6. Drift velocity and trapping in semiconductors - transient charge technique