Optical properties of a 'quasi-disordered' semiconductor: ZnIn2S4

Solid State Communications

Volumn 13, Issue 11, 1973, Pages 1805-1809

  Bosacchi, A ^a   Bosacchi, B ^a   Franchi, S ^a   Hernandez, L ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0015764304     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(73)90734-5     Document Type: Article

References (33)

1. Optical and electrical energy gaps in amorphous semiconductors
2. The crystal structure of In2ZnS4
3. Covalent bonding effect on Van Vleck paramagnetism in AIIBIII2CVI4 semiconductor compounds
4. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
5. Interband optical transitions in disordered semiconductors
6. Phosphorescence and Electron Traps. II. The Interpretation of Long-Period Phosphorescence
7. Application of Fermi-level analysis to the investigation of localized states distribution in the energy gap of vitreous As2S3
8. States in the gap
9. Effective-impurity model of optical absorption edges