Second Breakdown of Transistors During Inductive Turnoff

Proceedings of the IEEE

Volumn 61, Issue 3, 1973, Pages 393-395

  Hower, P L ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Westinghouse Research & Development Cent   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SECOND BREAKDOWN;

TRANSISTORS;

EID: 0015604544     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/PROC.1973.9044     Document Type: Article

References (2)

1. P. L. Hower and V. G. K. Reddi, “Avalanche injection and second breakdown in transistors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 320–335, Apr. 1970.
2. J. R. Hauser, “The effect of distributed base potential on emitter-current injection density and effective base resistance of stripe transistor geometrics,” IEEE Trans. Electron Devices, vol. ED-11, pp. 238–242, May, 1964.