Computer Analysis of the Double-Diffused MOS Transistor for Integrated Circuits

IEEE Transactions on Electron Devices

Volumn 20, Issue 3, 1973, Pages 275-283

  Lin, Hung Chang ^a   Jones, Wesley N ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; LOGIC CIRCUITS; SEMICONDUCTOR DEVICES, MIS;

TRANSISTORS;

EID: 0015604105     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17640     Document Type: Article

References (5)

1. Y. Tarui, Y. Hayashi, and T. Sekigawa, “Diffusion self-aligned MOST—A new approach for high speed devices,” in Proc. 1st Conf. Solid State Devices, Tokyo, 1969.
2. T. P. Cauge, J. Kocsis, H. J. Sigg, and G. D. Vendelin, “A double diffused MOS transistor achieves microwave gain,” Electronics, vol. 44, p. 99, Feb. 1971.
3. H. G. Sigg, G. D. Vendelin, T. P. Cauge, and J. Kocsis “D-MOS transistor for microwave applications,” IEEE Trans. Electron Devices, vol. KD-19, pp. 45–54, Jan. 1972.
4. H. C. Lin and C. J. Varker, “Normally-on load device for IGFET switching circuits,” 1969 NEREM Rec., vol. 11, p. 125, Nov. 1969.
5. Y. Tarui, Y. Hayashi, and T. Sekigawa “Diffusion self aligned enhancement-depletion MOS-IC,” in Proc. 2nd Conf. Solid State Devices, supplement to J. Japan Soc. Appl. Phys., vol. 40, pp. 193–198, 1971.