메뉴 건너뛰기




Volumn 20, Issue 1, 1973, Pages 45-55

The Quantitative Effects of Interface States on the Performance of Charge-Coupled Devices

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0015555198     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17607     Document Type: Article
Times cited : (78)

References (20)
  • 1
    • 0014764318 scopus 로고
    • Charge coupled semiconductor devices
    • W. S. Boyle and G. E. Smith, “Charge coupled semiconductor devices,” Bell Syst. Tech. J., vol. 49, pp. 587-593, 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , pp. 587-593
    • Boyle, W.S.1    Smith, G.E.2
  • 2
  • 4
    • 84938441451 scopus 로고    scopus 로고
    • A 500-element three-phase charge coupled device, ” unpublished
    • C. H. Séquin et al., “A 500-element three-phase charge coupled device,” unpublished.
    • Séquin, C.H.1
  • 5
    • 0015562052 scopus 로고
    • Measurements of transfer inefficiency of 250-element undercut-isolated charge coupled devices
    • Jan.
    • M. F. Tompsett, B. B. Kosicki, and D. Kahng, “Measurements of transfer inefficiency of 250-element undercut-isolated charge coupled devices,” Bell Syst. Tech. J., Jan. 1973.
    • (1973) Bell Syst. Tech. J.
    • Tompsett, M.F.1    Kosicki, B.B.2    Kahng, D.3
  • 6
    • 0015376030 scopus 로고
    • Performance limitations of the IGFET bucket-brigade shift register
    • July
    • C. N. Berglund and H. J. Boll, “Performance limitations of the IGFET bucket-brigade shift register,” IEEE Trans. Electron Devices, vol. ED-19, pp. 852–860, July 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 852-860
    • Berglund, C.N.1    Boll, H.J.2
  • 7
    • 0015097898 scopus 로고
    • A nonlinear analysis of charge coupled device transfer
    • R. J. Strain and N. L. Schryer, “A nonlinear analysis of charge coupled device transfer,” Bell Syst. Tech. J., vol. 50, pp. 1721–1740, 1971.
    • (1971) Bell Syst. Tech. J. , vol.50 , pp. 1721-1740
    • Strain, R.J.1    Schryer, N.L.2
  • 8
    • 0015201647 scopus 로고
    • Analog performance limitations of charge-transfer dynamic shift registers
    • Dec.
    • C. N. Berglund, “Analog performance limitations of charge-transfer dynamic shift registers,” IEEE J. Solid-State Circuits, vol. SC-6, pp. 391–394. Dec. 1971.
    • (1971) IEEE J. Solid-State Circuits , vol.SC-6 , pp. 391-394
    • Berglund, C.N.1
  • 9
    • 0015094978 scopus 로고
    • Linearized dispersion relation and Green's function for discrete charge transfer devices with incomplete transfer
    • W. B. Joyce and W. J.Bertram, “Linearized dispersion relation and Green's function for discrete charge transfer devices with incomplete transfer,” Bell Syst. Tech. J., vol. 50, pp. 1741–1759, 1971.
    • (1971) Bell Syst. Tech. J. , vol.50 , pp. 1741-1759
    • Joyce, W.B.1    Bertram, W.J.2
  • 11
    • 0015372732 scopus 로고
    • Charge transfer devices
    • M. F. Tompsett, “Charge transfer devices,” J. Vac. Sci. Technol., vol. 9, pp. 1166-1181, 1972.
    • (1972) J. Vac. Sci. Technol. , vol.9 , pp. 1166-1181
    • Tompsett, M.F.1
  • 12
    • 36149004075 scopus 로고
    • Electron-hole recombination in germanium
    • R. N. Hall, “Electron-hole recombination in germanium,” Phys. Rev., vol. 87 p. 387, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 387
    • Hall, R.N.1
  • 13
    • 33748621800 scopus 로고
    • Statistics of recombination of holes and electrons
    • W. Shockley and W. T. Read, “Statistics of recombination of holes and electrons Phys. Rev., vol. 87 pp., 835-842, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 14
    • 0015412704 scopus 로고
    • properties of an iaealized travelig-wave charge-coupled device
    • Oct
    • R. J. Strain, “properties of an iaealized travelig-wave charge-coupled device,” IEEE Trans. Electron Devices, vol. ED-19, pp. 1119–1130, Oct 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 1119-1130
    • Strain, R.J.1
  • 16
    • 84990454968 scopus 로고
    • Computer modelling of charge-coupled device characteristics
    • G. F. Amelio, “Computer modelling of charge-coupled device characteristics,” Bell Syst. Tech. J., vol. 51, pp. 705-730, 1972.
    • (1972) Bell Syst. Tech. J. , vol.51 , pp. 705-730
    • Amelio, G.F.1
  • 17
    • 0015159103 scopus 로고
    • Charge-coupled imaging devices: Design considerations
    • Nov.
    • G. F. Amelio, W. J. Bertram, Jr. and M. F. Tompsett, “Charge-coupled imaging devices: Design considerations,” IEEE Trans. Electron Devices, vol. ED-18, pp. 986-992, Nov. 1971.
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , pp. 986-992
    • Amelio, G.F.1    Bertram, W.J.2    Tompsett, M.F.3
  • 18
    • 84938445193 scopus 로고    scopus 로고
    • Spectral density of noise generated in charge transfer devices
    • submitted to
    • K. K. Thornber and M. F. Tompsett, “Spectral density of noise generated in charge transfer devices,” submitted to IEEE Trans. Electron Devices.
    • IEEE Trans. Electron Devices
    • Thornber, K.K.1    Tompsett, M.F.2
  • 19
    • 84938442489 scopus 로고    scopus 로고
    • Measurements of transfer inefficiency on a 96-element three-phase charge coupled device
    • unpublished.
    • M. F. Tompsett, “Measurements of transfer inefficiency on a 96-element three-phase charge coupled device,” unpublished.
    • Tompsett, M.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.