An accurate two-dimensional numerical analysis of the MOS transistor

Solid State Electronics

Volumn 15, Issue 5, 1972, Pages 547-557

  Vandorpe, D ^a   Borel, J ^b   Merckel, G ^b   Saintot, P ^b  

^a UNIVERSITÉ LYON 1   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICS-SOLID STATE;

TRANSISTORS, FIELD-EFFECT;

EID: 0015346146     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(72)90156-6     Document Type: Article

References (24)

1. A Radiation Effects Large Signal Equivalent Circuit for MOS Transistors
2. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
3. Two-dimensional analysis of double-gate m.o.s. transistor
4. Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
5. Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes
6. Conductance of MOS transistors in saturation