Ion-implanted complementary mos transistors in low-voltage circuits

IEEE Journal of Solid-State Circuits

Volumn 7, Issue 2, 1972, Pages 146-153

  Swanson, Richard M ^a   Meindl, James D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOS TRANSISTORS; MOST;

TRANSISTORS--FIELD EFFECT;

EID: 0015330654     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1972.1050260     Document Type: Article

References (10)

1. 3 complementary MOS transistors,” in Proc. 1st Conf. Solid-State Devices, pp. 132-136, Tokyo, 1969.
2. T. Leuenberger and E. Vittoz, “Complementary-MOS low-power low-voltage integrated binary counter,” Proc. IEEE (Special Issue on Materials and Processes in Integrated Electronics), vol. 59, pp. 1528–1532, Sept. 1962.
3. R. G. Daniels and R. R. Burgess, “The electronic wristwatch; an application for Si Gate CMOS-IC’s,” ISSCC Dig. Tech. Papers, 1971.
4. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969, p. 517.
5. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967.
6. J. D. Meindl and R. M. Swanson, “Potential improvements in power speed performance of digital circuits,” Proc. IEEE, vol. 59, pp. 815–816, May 1971.
7. R. W. Keyes, “Physical problems and limits in computer logic,” IEEE Spectrum, vol. 6, pp. 36–45, May 1969.
8. J. R. Burns, “Switching response of complementary symmetry MOS transistor logic circuits,” RCA Rev., vol. 24, pp. 627–661, Dec. 1964.
9. J. F. Gibbons, “Ion implantation in semiconductors,—Part 1: Range distribution theory and experiments,” Proc. IEEE, vol. 56, pp. 295–319, March 1968.
10. W. S. Johnson and J. F. Gibbons, “Projected range statistics in semiconductors,” Stanford Univ. Press, Stanford, Calif., 1970.