메뉴 건너뛰기




Volumn 19, Issue 2, 1972, Pages 152-159

Theoretical Analysis of Heterojunction Phototransistors

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS;

EID: 0015299694     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1972.17391     Document Type: Article
Times cited : (37)

References (18)
  • 1
    • 84938006654 scopus 로고
    • Theory of a wide-gap emitter for transistors
    • Nov.
    • H. Kroemer, “Theory of a wide-gap emitter for transistors,” Proc. IRE, 45, pp. 1535–1537, Nov. 1957.
    • (1957) Proc. IRE , vol.45 , pp. 1535-1537
    • Kroemer, H.1
  • 2
    • 84918194623 scopus 로고
    • Limitation and possibilities for improvement of photovoltaic solar energy converters-Part I: Considerations for earth's surface operations
    • July
    • M. Wolf, “Limitation and possibilities for improvement of photovoltaic solar energy converters-Part I: Considerations for earth's surface operations,” Proc. IRE, vol. 48, pp. 1246–1263, July 1960.
    • (1960) Proc. IRE , vol.48 , pp. 1246-1263
    • Wolf, M.1
  • 3
    • 0037480182 scopus 로고
    • Solid-state infrared-wavelength converter employing high-quantum-efficiency Ge-GaAs heterojunction
    • P. W. Kruse, F. C. Primble, and R. G. Schulze, “Solid-state infrared-wavelength converter employing high-quantum-efficiency Ge-GaAs heterojunction,” J. Appl. Phys., vol. 38, pp. 1718–1720. 1967.
    • (1967) J. Appl. Phys. , vol.38 , pp. 1718-1720
    • Kruse, P.W.1    Primble, F.C.2    Schulze, R.G.3
  • 4
    • 84892237163 scopus 로고
    • A low-threshold room-temperature injection laser
    • Apr.
    • I. Hayashi, M. B. Panish, and P. W. Foy, “A low-threshold room-temperature injection laser,” IEEE J. Quantum Electron. (Corresp.), vol. QE-5, pp. 211–212, Apr. 1969.
    • (1969) IEEE J. Quantum Electron(Corresp.) , vol.QE-5 , pp. 211-212
    • Hayashi, I.1    Panish, M.B.2    Foy, P.W.3
  • 5
    • 84939333159 scopus 로고    scopus 로고
    • U.S. Patent 2569347, Sept.
    • W. Shockley, U.S. Patent 2569347, Sept. 1951.
    • Shockley, W.1
  • 6
    • 84939384815 scopus 로고
    • Abrupt heterojunction emitters for transistors
    • S. S. Perlman and D. L. Feucht, “Abrupt heterojunction emitters for transistors,” Int. J. Electron., vol. 18, pp. 159–163, 1965.
    • (1965) Int. J. Electron. , vol.18 , pp. 159-163
    • Perlman, S.S.1    Feucht, D.L.2
  • 7
    • 84938016515 scopus 로고
    • The realization of a GaAs-Ge wide band gap emitter transistor
    • Jan.
    • D. K. Jadus and D. L. Feucht, “The realization of a GaAs-Ge wide band gap emitter transistor,” IEEE Trans. Electron Devices. vol. ED-16, pp. 102–107. Jan. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 102-107
    • Jadus, D.K.1    Feucht, D.L.2
  • 8
    • 5844357259 scopus 로고
    • ZnSe-Ge heterojunction transisters
    • Sept.
    • H. J. Hovel and A G. Milnes, “ZnSe-Ge heterojunction transisters,” IEEE Trans. Electron Devices, vol. ED-16, pp. 766–774, Sept. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 766-774
    • Hovel, H.J.1    Milnes, A.G.2
  • 10
    • 0040990218 scopus 로고
    • Experiments on Ge-GaAs heterojunctions
    • R. L. Anderson, “Experiments on Ge-GaAs heterojunctions;” Solid State Electron., vol. 5, pp. 341–351. 1962.
    • (1962) Solid State Electron. , vol.5 , pp. 341-351
    • Anderson, R.L.1
  • 11
    • 84885746493 scopus 로고
    • The photovoltaic characteristics of p-n Ge-Si and Ge-GaAs heterojunctions
    • J. P. Donnelly and A. G. Milnes, “The photovoltaic characteristics of p-n Ge-Si and Ge-GaAs heterojunctions,” Int. J Electron., vol. 20, pp. 295–310, 1966.
    • (1966) Int. J Electron. , vol.20 , pp. 295-310
    • Donnelly, J.P.1    Milnes, A.G.2
  • 12
    • 0014482487 scopus 로고
    • General solutions of photovoltaic effects in semiconductor junctions
    • K. Takahashi, “General solutions of photovoltaic effects in semiconductor junctions,” Int. J. Electron., vol. 26, pp. 253–261, 1969.
    • (1969) Int. J. Electron. , vol.26 , pp. 253-261
    • Takahashi, K.1
  • 14
    • 36849127070 scopus 로고
    • Absorption data of laser-type GaAs at 300° and 77°K
    • N. J. Turner and W. E. Reese, “Absorption data of laser-type GaAs at 300° and 77°K,” J. Appl. Phys., vol. 35, pp. 350–352, 1964.
    • (1964) J. Appl. Phys. , vol.35 , pp. 350-352
    • Turner, N.J.1    Reese, W.E.2
  • 15
    • 36149015973 scopus 로고
    • Intrinsic optical absorption in single-crystal Ge and Si at 77°K and 300°K
    • W. C. Dash and R. Newman, “Intrinsic optical absorption in single-crystal Ge and Si at 77°K and 300°K,” Phys. Rev., vol. 99, pp. 1151–1155, 1955.
    • (1955) Phys. Rev. , vol.99 , pp. 1151-1155
    • Dash, W.C.1    Newman, R.2
  • 16
    • 0014710295 scopus 로고
    • GaAs-GaxA1-xAs heterostructure injection lasers which exhibit low thresholds at room temperature
    • I. Hayashi and M. B. Panish, “GaAs-GaxA1-xAs heterostructure injection lasers which exhibit low thresholds at room temperature,” J. Appl. Phys., vol. 41, pp. 150-163, 1970.
    • (1970) J. Appl. Phys. , vol.41 , pp. 150-163
    • Hayashi, I.1    Panish, M.B.2
  • 17
    • 0346359389 scopus 로고
    • Composition dependence of the Ga1-xAlxAs direct and indirect energy gaps
    • H. C. Casey, Jr. and M. B. Panish, “Composition dependence of the GaI-xAlxAs direct and indirect energy gaps,” J. Appl. Phys, vol. 40, pp. 4910-4912, 1969.
    • (1969) J. Appl. Phys , vol.40 , pp. 4910-4912
    • Casey, H.C.1    Panish, M.B.2
  • 18
    • 36849108387 scopus 로고
    • Optical gain and spatial resolution in a broad-area phototransistor
    • S. B. Schuldt and P. W. Kruse, “Optical gain and spatial resolution in a broad-area phototransistor,” J. Appl. Phys., vol. 39, pp. 5573–5577, 1968.
    • (1968) J. Appl. Phys. , vol.39 , pp. 5573-5577
    • Schuldt, S.B.1    Kruse, P.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.