Large-signal theory for rectangular-voltage operation of a uniform avalanche zone in impatt diodes

Electronics Letters

Volumn 7, Issue 7, 1971, Pages 154-156

  Sellberg, F ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Avalanche diodes; IMPATT devices

Indexed keywords

AVALANCHE DIODES; IMPATT DIODES;

SEMICONDUCTOR DEVICES--DIODE;

EID: 0015214911     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19710100     Document Type: Article

References (6)

1. MISAWA, T.: ‘Saturation current and large-signal operation of a Read diode’, Solid-State Electron., 1970, 13, pp. 1363–1368
2. SJÜLUND, A.: ‘Noise in IMPATT oscillator at large r.f. amplitudes’ (see p. 161)
3. PENFIELD, P., JUN.: ‘Proposed high-efficiency diode oscillator’, Electron. Lett., 1969, 5, pp. 387–388
4. SZE, S. M., and GIBBONS, G.: ‘Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs and GaP’, Appl. Phys. Lett., 1966, 8, pp. 111–113
5. KIM, C. K.: ‘A GaAs avalanche diode analysis and an approximate indirect measurement of hole saturation velocity’, IEEE Trans., 1969, ED-16, pp. 917–922
6. BLUM, F. A., and KRAMER, N. B.: ‘Frequency scaling of IMPATT diodes’, IEEE Trans., 1970, ED-17, pp. 983–986