Electromigration and failure in electronics: An introduction

Proceedings of the IEEE

Volumn 59, Issue 10, 1971, Pages 1409-1418

  D'heurle, Francois M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION;

FILMS, CONDUCTING; INTEGRATED CIRCUITS; METALLOGRAPHY;

FILMS--METALLIC;

EID: 0015142451     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/PROC.1971.8447     Document Type: Article

References (82)

1. J. Verhoeven, “Electrotransport in metals,” Metallurgical Rev., vol. 8, 1963, 311–368.
2. (2] V.A. Sterkov and P.V. Pavlov, “Self diffusion of germanium along intrinsic dislocations in an external electric field,” Sov. Phys.-Solid State, vol. 9. 1967. pp. 643–646.
3. T. Klein and J.R.A. Beale, “Simultaneous diffucsion of oppositely charged impurities in semi conductors,” Solid-State Electron., vol. 9, 1966, pp. 59–69.
4. P.G. Shewmo n, Difficion in Solids. New York: McGrawHill, 1963.
5. Y. Adda and J. Phillibert, La Diffusion dans les Solides. Paris: Presses Universitaires de France. 1966.
6. A.D. LeClaire, “Some predicted effects of temperature gradients on diffusion in crystals,” Phys. Rev., vol. 93. 1954. p. 344.
7. H.B. Huntington, “Driving forces for thermal mass transport,” J. Phys. Chem. Solids. vol, 29. 1968. pp. 1641–1650.
8. R.A. Oriani, “Thermomigration in solid metals,” J. Plays. Chem. Solids, vol. 30, 1969, pp. 339–351.
9. G.M. Newmann, “On thermotransport in tungsten,” Z. Naturforsch. A., vol. 22. 1967. pp. 393–395.
10. S.C. Ho, T. Hehenkamp and H.B. Huntington, “Thermal diffusion in platinum,” J. Phys. Chem. Solids, vol. 26, 1965, pp. 251–258.
11. H.B. Huntington and A.R. Grone, “Current induced marker motion in gold wires,” J. Phys. Chem. Solids, vol, 20. 1961, pp. 76–87.
12. C. Bosvieux and J. Friedel, “Sur l'électrolyse des alliages metalliques,’ J. Phys. Chem. Solids, vol. 23, 1962, pp. 123–136.
13. A.R. Grone, “Current induced marker motion in copper,” J. Phys. Chem. Solids, vol. 20, 1961, pp. 88–93.
14. G.A. Sullivan, “Search for reversal in copper electromigration,” J. Phys. Chem. Solids, vol. 28, 1962, pp. 347–350.
15. S.M. Klotsman, A.N. Timofeev, and I. Sh. Trakhtenberg, “Inter- granular self diffusion of silver in an electric field,” Sov. Phys.-Solid State, vol. 8, pp. 2386–2400.
16. S.M. Klotsman, “Electron transfer of silver and copper between crystallites,” Phys. Metals Metallorr. (USSR). vol. 16. no. 4. 1964.
17. H.B. Huntington and S.C. H o, “Electrornigration in metals,” J. Phys. Soc. Japan. vol. 18. suppl. II, 1963, pp. 202–208.
18. R.V. Penney, “Current-induced mass transport in aluminum,” J. Phys. Chpm. Solide. vol. 25, 1964, pp. 335–345.
19. J. Verhoeven, “Electoransport as a means of purifying metals,” J. Metals vol. 18.1966. pp. 2 6–31.
20. P.S. H o, “Electromigration and Soret effect in cobalt,” J. Phys. Chem. Solids. vol. 27.1966. pp. 1331–1338.
21. S.C. Ho and H.B. Huntington, “Electromigration and void observation in silver.” J. Phys. Chem, Solids. vol. 27. 1966. pp. 1319–1329.
22. T. Hehenkamp, “Diffusion und Elektrotransport von Kohlenstoff in Kobalt,” Acta Met., vol. 14, 1966, pp. 887–893.
23. H.M. Gilder and D. Lazarus, “Effect of high electronic current density on the motion of Au and Sb in gold,” Phys. Rev., vol. 145, 1966, pp. 507–518.
24. S.M. Klostman, A.N. Timofeev, and I. Sh. Trakhtenberg “On the mechanism of lattice electromigration in metals,” Phys. Status Solidi, vol. 18. 1966. pp. 847–852.
25. G.M. -Newrnitim and W. Hirschwald, “Electrotransport in tungsten,” Z. Naturforsch. A., vol. 22. 1967. pp. 388–392.
26. H.J. Stepper and H. Wever “Electrodiffusion in dilute copper alloys,” J. Phys. Chem. Solids. vol. 28. 1967. pp. 103–1108.
27. H. Hering and H. Wever, “Electro- and thermotransport in nickel Z. Phys. Chem. vol. 1, 1967.pp. 310–325.
28. A.N. Naumov and V.B. Ptashnik “Methods for the determination of the isotope diffusion effect under conditions of electro transport in a solid body,” Sov. Phys.-Solid State, vol. 8, 1967, pp. 2869–2871.
29. T. Hehenkamp, C. Herzig, and T. Heumann, “Determination of the charge and the residual resistivity of activated impurity-vacancy complexes in metals by electrotransport, “Kernsforschungsanlage Julich (Proc. Int. pp. Vacancies and Interstitials in Metals), Sept. 1968. pp. 69–81.
30. T. Thernquist and A. Lodding, “Electro- and thermotransport in lithium,” Kernsforschungsanlage Julich (Proc. Int. Conf. Vacancies and Interstitials in Metals). Sept. 1968.pp. 55–68.
31. H. Dubler and H. Wever, “Thermo- und Elektrotransport in ß-Titan undfl-Zirkonium Phys. Status Solidi vol. 25, 1968, pp. 109–118.
32. D. Campbell and H. Huntington, “Thermomigration and electromigration in zirconium,” Phys. Rev. vol. 179, 1969, pp. 601–612.
33. R.R. Patil and H.B. Huntington, “Electromigration and associated void formation in silver,” J. Phys. Chem. Solids, vol. 31, 1970, pp. 463-A'7A
34. N.V. Doan and G. Brebec, “Migration sous l'effet d'un champ electrique de Ag2¹ et de Sb 124 dans l’argent,” J. Phys. Chem. Solids, vol. 31. 1970. on. 475–484.
35. N.V. Doan, “Effet de valence en electromigration dans l’argent,” J. Phys. Chem. Solids. vol. 3, 1970. pp. 2079–2085.
36. D.F. Kalinovich, I.I. Kovenskii, M.O. Smolin, and V.M. Statsenko, “’Electrotransport of molybdenum in Ni-18 at % Mo alloy,” Fir. Tverd. Tela (USSR). vol. 12, 1970, pp. 3042–3044.
37. T. Mori, M. Meshii, and J.W. Kaufman, “Quenching rate and quenched-in lattice vacancies in gold,” J. Appl. Phys., vol. 33, 1962, pp. 2776–2780.
38. R.O. Simmons and R.W. Balluffi, “Measurements of equilibrium vacancy concentrations in aluminum,” Phys. Rev., vol. 117, 1960, pp. 52–61.
39. H.B. Huntington, “Forced motions in metals: electromigration and thermomigration (electromigration in zinc and cadmium),” in Bull. Amer. Phys. Soc. Mar. 1971 Meet Cleveland, Ohio.
40. D. Chhabra, N. Ainslie, and D. Jepsen, “Theory of failure in thinfilm. conductors,”. presented at Electrochemical Soc. Spring Meet., Dallas, Tex., May, 1967.
41. R.W. Berry, G.M. Bouton, W.C. Ellis, and D.E. Engling, “Growth of whisker crystals and related morphologies by electrotransport, “Appl. Phys. Lett. vol. 9, 1966, pp. 263–265.
42. R.P. Johnson, “Construction filament surfaces,” Phys. Rev., vol, 54, pp. 459–467.
43. D. O’Boyle, “Observations on electromigration and the Soret effect in tungsten,” J. Appl. Phys., vol. 36, 1965, pp. 2849–2853.
44. J.C. Peacock and A.D. Wilson, “Electrotransport of tungsten and life of a filament,” J. Appl. Phys., vol, 39, 1968, pp. 6037–6041.
45. D.L. Kennedy, “Electrotransport in thin indium. films,” J. Appl. Phys., vol. 39, 1968, pp. 6102–6104.
46. I.A. Blech and H. Sello, “The failure of thin aluminum current-carrying strips on oxidized silicon,” Phys. Failure Electron., T. Shilliday and J. Vaccaro, Eds., vol. 5, Rome Air Develop. Ctr., Griffiss AFB, Rome, N. Y pp. 496–505.
47. EW. mutter “Electrmigration in metal film conductors,” Abstracts (Electrochemical Soc. Spring Meet., Dallas, Tex., May 1967), pp. 96–98.
48. R.G. Shepheard and R.P. Sopher, “Effects of current density and temperature on lifetime of aluminum thin film conductors,” Abstracts (Electrochemical Soc. Spring Meet., Dallas, Tex., May 1967).
49. P.B. Ghate, “Some observations on the electromigration in aluminum films.” eAppl. Phys. Lett. vol. 11. 1967. pp. 14–16.
50. J.K. Howard and R.F. Ross, “Electromigration effects in aluminum film on silicon substrates,” Appl. Phys. Lett., vol. 11, 1967, pp. 85–87.
51. I.A. Blech and E.S. Meieran, “Direct transmission electron microscope observations of electrotransport in aluminum films,” Appl. Phys. Lett., vol. 11, 1967, pp. 263–266.
52. J.R. Black, “Mass transport of aluminum by momentum exchange with conducting electrns,” presented at 1967 IEEE 6th Annual Reliability Phys. Symp., Los Angeles, Calif.
53. R. Rosenberg and L. Berenbaum, “Resistance monitoring and effects of non-adhesion during electromigration in aluminum films,” Appl. Phys. Lett., vol. 12. 1968. pp. 201–204.
54. M.J. Attardo et al., “Aluminum electromigration in long stripes,” Presentation Abstracts 7th Ann. Reliability Phys. Symp. (Washington, D.C., Dec. 1968), pp. 7–8.
55. J.R. Black, “Aluminum. conductor failure by mass transport,” in Proc. 3rd Int. Cong, on Microelectronics (Munich, Germany, 1968).
56. J.R. Black, “Electromigration—A brief survey and some recent results IEEE Trans. Electron Devices. vol. ED-16. Apr. 1969. pp. 33–347.
57. J.R. Devaney, “Investigation of current induced mass transport in thin metal conducting stripes,” in Proc. 3rd Ann. Scanning Electron Microscrope Syms. O. Johan, Ed. (Chicago. Apr. 1970). pp. 417–424.
58. S.M. SpitZer and S. Schwartz, “The effects of dielectric overcoating on electromigration in aluminum interconnections,” IEEE Trans. Electron Devices. vol. ED-16. Aor. 1969. pp. 348–350.
59. I.A. Blech and E.S. Meieran “Electromigration in thin aluminum films,” J. Appl. Phys., vol. 40, 1969, pp. 485–491.
60. H. Sello, “Ohmic contacts and integrated circuits,” in Ohmic Contacts to Semiconductors, R. Schwartz, Ed. New York: Electrochemical Society, 1969. pp. 277–298.
61. C.B. Oliver, “Degradation of evaporated aluminum-contacts on silicon planar transistors,” presented at 1967 IEEE 6th Annual Reliability Phys. Symo. Los Angeles. Calif. 1967.
62. J.R. Black., “Etch pit formation in silicon at aluminum-silicon contacts because of transport of silicon in aluminum by momentum exchange with conducting electrons,” in Ohmic Contacts to Semiconductors, R. Schwartz, Ed., New York: Electrochemical Society, 1969, pp. 711–771.
63. R. Rosenberg, “Value of DoZ· for gain boundary electromigration in aluminum films.” Appl. Phys. Lett vol. 16. 1970, pp. 27–29.
64. F. d'Heurle and I. Ames, “Electromigration in single-crystal aluminum films.” Appl. Phys. Lett, vol. 16. 1970 pp. 80–81.
65. M.J. Attardo and R. Rosenberg, “Electromigration damage in aluminum film conductors.” J. Appl. Phys. vol. 41, 1970, pp. 2381–2386.
66. J.K. Howard and R.F. Ross, “The effect of preferred orientation on the the rate of electromigration and its implication to the cracked-stripe failure mode.” IBM Tech. Rep. 22. 601, Mar. 1968.
67. B. Agrawala, M. Attardo, and A.P. Ingraham, “The dependence of electromigration induced failure time on the length and width of thin film conductors.” J. April_ Phys. vol. 41. 1970.pp. 3954–3960.
68. M.C. Shine and F. d’Heurle, “Activation energy electromigration in aluminum films alloyed with copper,” IBM J. Res. Develop., Sept. 1971.
69. P.M. Austin and A.F. Mayadas, “Correlation between resistance ratios and electromigration failure in aluminum films,” submitted to J. Vac. Sci. Technol.
70. T.E. Hartman and J.C. Blari “Electromigration in thin gold films,” IEEE Trans. Electron Devices, vol. ED-16, Apr. 1969, pp. 407–410.
71. L. Berenbaum and R. Rosenberg, “Surface topology changes during electromigration in metallic thin film stripes,” Thin Solid Films, vol. 4, 1969. no. 187–204.
72. F. d'Heurle - L. Berenbaum, and R. Rosenberg, “On the structure of aluminum films Trans. Met. Soc. AIME, vol. 242, 1968, pp. 502–511.
73. F.M. d’Heurle, “The effect of copper additions on electromigration in aluminum thin films.” Met. Trans. vol. 2. 1971 pp. 681–689.
74. N.H. Nachtrieb et el., “Self-diffusion in solid sodium II. The effect of pressure,” J. Chem, Phys., vol. 20, 1952, pp. 1189–1196.
75. R. Rosenberg and M. Ohring, “Void formation and growth during electromigration in thin fils,” J. Appl. Phys. July 1971.
76. H.J. Bhatt, “Superior aluminum interconnection of monolithic integrated circuits,” Abstracts Int. Electron Device Meet. (Washington, D.C. Oct. 1970), p. 48.
77. I. Ames, F.M. d’Heurle, and R. Horstmann, “Reduction of electro migration in aluminum films by copper doping,” IBM J. Res. Develop. vol. 14. 1970. pp. 461–463.
78. A. Gangulee and F. d'Heurle “The effect of alloy additions on electro migration failure in thin aluminum films,” Appl. Phys. Lett., vol. 19, Aug. 1971.
79. F. Barson, E. Adler, and J. Overmeyer, “Copper junction poisoning from AI-Cu lands,” Extended Abstracts (The Electrochemical Soc. Fall Meet. Atlantic City. N.J. Oct. 1970). pp. 475–477.
80. R.M. Valleta and H.S. Lehman, “Al-Cu for semiconductor metallurgy:’ Extended Abstracts (The Electromechanical Soc. Fall Meet., Atlantic City, N.J. Oct. 1970), p. 474.
81. L. Berenbaum and B. Patnaik, “Study of failure mechanisms in AI-Cu films by high-voltage electron microscopy,” Appl. Phys. Lett., vol. 18, 1971, pp. 284–286.
82. L. Berenbaum and R. Rosenberg, “Electromigration damage in AI-Cu thin films,” presented at Reliability Phys. Symp., Las Vegas, Nev., Mar.-Apr. 1971.