Drift velocity of electrons and holes and associated anisotropic effects in silicon

Journal of Physics and Chemistry of Solids

Volumn 32, Issue 8, 1971, Pages 1707-1720

  Canali, C ^a   Ottaviani, G ^a   Alberigi Quaranta, A ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS, ENERGY LEVELS;

SEMICONDUCTORS--SILICON;

EID: 0015112569     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(71)80137-3     Document Type: Article

References (48)

1. Hot Electrons in Germanium and Ohm's Law
2. Properties of Silicon and Germanium
3. Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fields
4. The field-dependence of carrier mobility in silicon and germanium
5. Measurement of the drift velocity of holes in silicon at high-field strengths
6. Abhängigkeit der Anisotropie der elektrischen Leitfähigkeit des Siliziums vom elektrischen Feld
7. Calculation of drift velocity in silicon at high electric fields†
8. Experimental results on the drift velocity of hot carriers in silicon and associated anisotropic effects
9. Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique
10. Die Beweglichkeit “heisser” elektronen und ihr einfluss auf die Anstiegszeit der impulse von Halbleiterzählern aus n-silizium
11. Measurement of drift velocity of electrons in silicon by exciting a diode structure with short superradiant laser pulses
12. Recombination Mechanisms
13. A 40 keV Pulsed Electron Accelerator
14. Lattice-Scattering Ohmic Mobility of Electrons in Silicon
15. Electron drift velocity and related phenomena in Si
16. HOT-HOLE ANISOTROPY IN SILICON
17. Conductivity of Hot Holes in Silicon at 77 °K