Experimental results on transient space charge limited currents in p-n junctions

Solid State Electronics

Volumn 14, Issue 8, 1971, Pages 661-666

  Canali, C ^a   Ottaviani, G ^a   Taroni, A ^a   Zanarini, G ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, IRRADIATION;

SEMICONDUCTOR DEVICES--JUNCTIONS;

EID: 0015108375     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(71)90145-6     Document Type: Article

References (14)

1. Transient Behaviour of Space-Charge-Limited Currents in p-Type Silicon
2. A 40 keV Pulsed Electron Accelerator
3. Experimental results on the drift velocity of hot carriers in silicon and associated anisotropic effects
4. Radial Resistivity Profile in High-Purity Silicon
5. A new method for measuring the ionized-impurity concentration in high-purity materials