Extension of Ramo's theorem as applied to induced charge in semiconductor detectors

Nuclear Instruments and Methods

Volumn 92, Issue 1, 1971, Pages 137-140

  Cavalleri, G ^a   Gatti, E ^b   Fabri, G ^a   Svelto, V ^a,c  

^a CISE SpA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

RADIATION--DETECTORS;

EID: 0015034254     PISSN: 0029554X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0029-554X(71)90235-7     Document Type: Article

References (16)

1. On the information available from the rise-time of the charge pulse supplied by semiconductor particle detectors
2. Time spreads of pulses generated by beta-particles in silicon drifted detectors
3. The shape of pulses generated by alpha-particles in silicon drifted detectors
4. Energy balance method for pulse shape determination in solid-state ionization chamber