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Volumn 17, Issue 10, 1970, Pages 843-852

The Saturation Characteristics of n-p-v-n Power Transistors

Author keywords

[No Author keywords available]

Indexed keywords

IETDA; TOWER TRANSISTORS;

EID: 0014867757     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1970.17085     Document Type: Article
Times cited : (19)

References (20)
  • 1
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    • The saturation characteristics of high-voltage transistors
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    • L. A. Hahn, “The saturation characteristics of high-voltage transistors,” Proc. IEEE, vol. 55, pp. 1384–1388, August 1967.
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    • Hahn, L.A.1
  • 2
    • 0014538273 scopus 로고
    • The effect of collector resistance upon the high current capability of n-p-v-n transistors
    • July
    • L. A. Hahn, “The effect of collector resistance upon the high current capability of n-p-v-n transistors,” IEEE Trans. Electron Devices, vol. ED-16, pp. 654–656, July 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 654-656
    • Hahn, L.A.1
  • 3
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    • The equivalent circuit of a transistor with a lightly-doped collector operating in saturation
    • J. R. A. Beale and J. A. G. Slatter, “The equivalent circuit of a transistor with a lightly-doped collector operating in saturation,” Solid-State Electron., vol. 11, pp. 241–252, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 241-252
    • Beale, J.R.A.1    Slatter, J.A.G.2
  • 5
    • 5444230278 scopus 로고
    • Characteristics of two-region saturation phenomena
    • January
    • L. E. Clark, “Characteristics of two-region saturation phenomena,” IEEE Trans. Electron Devices, vol. ED-16, pp. 113–116, January 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 113-116
    • Clark, L.E.1
  • 6
    • 84917975465 scopus 로고
    • On the static collector-emitter saturation voltage of a transistor with a lightly-doped collector
    • (Letters), April
    • W. J. Chudobiak, “On the static collector-emitter saturation voltage of a transistor with a lightly-doped collector,” Proc. IEEE (Letters), vol. 57, pp. 718–720, April 1969.
    • (1969) Proc. IEEE , vol.57 , pp. 718-720
    • Chudobiak, W.J.1
  • 7
    • 84948609787 scopus 로고
    • Ph.D. dissertation, Carleton University, Ottawa, Ontario, Canada
    • W. J. Chudobiak, Ph.D. dissertation, Carleton University, Ottawa, Ontario, Canada, 1969.
    • (1969)
    • Chudobiak, W.J.1
  • 8
    • 0000441302 scopus 로고
    • Determination of the impurity distribution in junction diodes from capacitance-voltage measurements
    • June
    • J. Hilibrand and R. D. Gold, “Determination of the impurity distribution in junction diodes from capacitance-voltage measurements,” RCA Rev., vol. 21, pp. 245–252, June 1960.
    • (1960) RCA Rev. , vol.21 , pp. 245-252
    • Hilibrand, J.1    Gold, R.D.2
  • 10
    • 84948603467 scopus 로고
    • The measurement of the temperature dependence of the mobility and effective lifetime of minority carriers in the base region of silicon transistors
    • March
    • D. M. Evans, “The measurement of the temperature dependence of the mobility and effective lifetime of minority carriers in the base region of silicon transistors,” J. Electron. Contr., vol. 6, pp. 204–207, March 1959.
    • (1959) J. Electron. Contr. , vol.6 , pp. 204-207
    • Evans, D.M.1
  • 11
    • 0346658116 scopus 로고
    • Electrical properties of silicon containing arsenic and boron
    • October
    • F. J. Morin and J. P. Maita, “Electrical properties of silicon containing arsenic and boron,” Phys. Rev., vol. 96, pp. 28–35, October 1954.
    • (1954) Phys. Rev. , vol.96 , pp. 28-35
    • Morin, F.J.1    Maita, J.P.2
  • 13
    • 84916354522 scopus 로고
    • Current gain and cutoff frequency falloff at high currents
    • January
    • R. J. Whittier and D. A. Tremere, “Current gain and cutoff frequency falloff at high currents,” IEEE Trans. Electron Devices, vol. ED-16, pp. 39–57, January 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 39-57
    • Whittier, R.J.1    Tremere, D.A.2
  • 14
    • 0012104396 scopus 로고
    • Optimum length of emitter stripes in ‘comb’ structure transistors
    • (Correspondence), February
    • K. J. S. Cave and J. A. Barnes, “Optimum length of emitter stripes in ‘comb’ structure transistors,” IEEE Trans. Electron Devices (Correspondence), vol. ED-12, pp. 84–85, February 1965.
    • (1965) IEEE Trans. Electron Devices , vol.ED-12 , pp. 84-85
    • Cave, K.J.S.1    Barnes, J.A.2
  • 16
    • 84910880891 scopus 로고
    • On crowding effects and failure mechanisms in high power transistor switches
    • (Correspondence), December
    • W. J. Chudobiak, “On crowding effects and failure mechanisms in high power transistor switches,” Proc. IEEE (Correspondence), vol. 56, pp. 2176–2177, December 1968.
    • (1968) Proc. IEEE , vol.56 , pp. 2176-2177
    • Chudobiak, W.J.1
  • 17
    • 0014706633 scopus 로고
    • Fluorescence thermography and current crowding in high-frequency transistor switches
    • January
    • W. J. Chudobiak, “Fluorescence thermography and current crowding in high-frequency transistor switches,” Microelectron. Rel., pp. 75–76, January 1970.
    • (1970) Microelectron. Rel. , pp. 75-76
    • Chudobiak, W.J.1
  • 19
    • 84948593196 scopus 로고
    • Utilization des transistors de puissance en VHF
    • March
    • J. Seneret, “Utilization des transistors de puissance en VHF,” Onde Elec., vol. XLV, pp. 311–316, March 1965.
    • (1965) Onde Elec. , vol.45 , pp. 311-316
    • Seneret, J.1
  • 20
    • 84916478579 scopus 로고
    • Some limitations of the power output capability of VHF transistors
    • November
    • S. Krishna, P. J. Kannam, and W. Doesschate, Jr., “Some limitations of the power output capability of VHF transistors,” IEEE Trans. Electron Devices, vol. ED-15, pp. 855–860, November 1968.
    • (1968) IEEE Trans. Electron Devices , vol.ED-15 , pp. 855-860
    • Krishna, S.1    Kannam, P.J.2    Doesschate, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.