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The saturation characteristics of high-voltage transistors
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Hahn, L.A.1
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The effect of collector resistance upon the high current capability of n-p-v-n transistors
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L. A. Hahn, “The effect of collector resistance upon the high current capability of n-p-v-n transistors,” IEEE Trans. Electron Devices, vol. ED-16, pp. 654–656, July 1969.
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Hahn, L.A.1
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The equivalent circuit of a transistor with a lightly-doped collector operating in saturation
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J. R. A. Beale and J. A. G. Slatter, “The equivalent circuit of a transistor with a lightly-doped collector operating in saturation,” Solid-State Electron., vol. 11, pp. 241–252, 1968.
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Characteristics of two-region saturation phenomena
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January
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L. E. Clark, “Characteristics of two-region saturation phenomena,” IEEE Trans. Electron Devices, vol. ED-16, pp. 113–116, January 1969.
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Clark, L.E.1
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On the static collector-emitter saturation voltage of a transistor with a lightly-doped collector
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(Letters), April
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W. J. Chudobiak, “On the static collector-emitter saturation voltage of a transistor with a lightly-doped collector,” Proc. IEEE (Letters), vol. 57, pp. 718–720, April 1969.
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Chudobiak, W.J.1
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Ph.D. dissertation, Carleton University, Ottawa, Ontario, Canada
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W. J. Chudobiak, Ph.D. dissertation, Carleton University, Ottawa, Ontario, Canada, 1969.
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Chudobiak, W.J.1
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Determination of the impurity distribution in junction diodes from capacitance-voltage measurements
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J. Hilibrand and R. D. Gold, “Determination of the impurity distribution in junction diodes from capacitance-voltage measurements,” RCA Rev., vol. 21, pp. 245–252, June 1960.
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Hilibrand, J.1
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The measurement of the temperature dependence of the mobility and effective lifetime of minority carriers in the base region of silicon transistors
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March
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D. M. Evans, “The measurement of the temperature dependence of the mobility and effective lifetime of minority carriers in the base region of silicon transistors,” J. Electron. Contr., vol. 6, pp. 204–207, March 1959.
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Evans, D.M.1
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Electrical properties of silicon containing arsenic and boron
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84916354522
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Current gain and cutoff frequency falloff at high currents
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January
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R. J. Whittier and D. A. Tremere, “Current gain and cutoff frequency falloff at high currents,” IEEE Trans. Electron Devices, vol. ED-16, pp. 39–57, January 1969.
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Whittier, R.J.1
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Optimum length of emitter stripes in ‘comb’ structure transistors
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(Correspondence), February
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K. J. S. Cave and J. A. Barnes, “Optimum length of emitter stripes in ‘comb’ structure transistors,” IEEE Trans. Electron Devices (Correspondence), vol. ED-12, pp. 84–85, February 1965.
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Cave, K.J.S.1
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On crowding effects and failure mechanisms in high power transistor switches
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(Correspondence), December
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W. J. Chudobiak, “On crowding effects and failure mechanisms in high power transistor switches,” Proc. IEEE (Correspondence), vol. 56, pp. 2176–2177, December 1968.
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Chudobiak, W.J.1
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17
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Fluorescence thermography and current crowding in high-frequency transistor switches
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January
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W. J. Chudobiak, “Fluorescence thermography and current crowding in high-frequency transistor switches,” Microelectron. Rel., pp. 75–76, January 1970.
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Chudobiak, W.J.1
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18
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Stanford Electronic Laboratories, Stanford, Calif., Rept. 713-1, February
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R. B. Ward, “A study of class-C application of power transistors at high and very high frequencies,” Stanford Electronic Laboratories, Stanford, Calif., Rept. 713-1, February 1963.
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A study of class-C application of power transistors at high and very high frequencies
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Ward, R.B.1
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Utilization des transistors de puissance en VHF
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March
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J. Seneret, “Utilization des transistors de puissance en VHF,” Onde Elec., vol. XLV, pp. 311–316, March 1965.
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Seneret, J.1
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20
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Some limitations of the power output capability of VHF transistors
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November
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S. Krishna, P. J. Kannam, and W. Doesschate, Jr., “Some limitations of the power output capability of VHF transistors,” IEEE Trans. Electron Devices, vol. ED-15, pp. 855–860, November 1968.
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Krishna, S.1
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