Avalanche Degradation of hFE

IEEE Transactions on Electron Devices

Volumn 17, Issue 10, 1970, Pages 871-878

  McDonald, B A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DEGRADATION; IETDA; PLANAR TRANSISTORS; TRANSISTORS;

EID: 0014864894     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1970.17089     Document Type: Article

References (9)

1. E. H. Nicollian and A. Goetzberger, Sixth Annual Rel. Symp., November 1967.
2. E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, “Ion transport phenomena in insulating films,” J. Appl. Phys., vol. 36, pp. 1664–1673, May 1965.
3. C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier generation and recombination in p-n junctions and p-n junction characteristics,” Proc. IRE, vol. 45, pp. 1228–1243, September 1957.
4. J. E. Iwersen, A. R. Bray, and J. J. Kleimack, “Low-current alpha in silicon transistors,” IRE Trans. Electron Devices, vol. ED-9 pp. 474–478, November 1962.
5. D. J. Fitzgerald and A. S. Grove, “Surface recombination in semiconductors,” Surface Science, vol. 9, pp. 347–369, February 1968.
6. FE” presented at Internat. Meeting Electron Devices, Washington, D. C., October 1968.
7. A. S. Grove, B. E. Deal, E. H. Snow, and C. T. Sah, “Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures,” Solid-State Electron., vol. 8, pp. 145–163, 1965.
8. FE degradation due to reverse bias emitter-base function stress,” IEEE Trans. Electron Devices, vol. ED-16, pp. 403–406, April 1969.
9. E. H. Snow, A. S. Grove, and D. J. Fitzgerald, “Effect of ionizing radiation on oxidized silicon surfaces and planar devices,” Proc. IEEE, vol. 55, pp. 1168–1185, July 1967.