Morphology of epitaxial growth of GaAs by a molecular beam method: The observation of surface structures

Journal of Applied Physics

Volumn 41, Issue 7, 1970, Pages 2780-2786

  Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; GALLIUM ARSENIDE; GROWING; JAPIA; METHOD; SEMICONDUCTORS, GALLIUM COMPOU;

EID: 0014801584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1659315     Document Type: Article

References (25)

1. The terminology is defined by
2. 12.
3. Grown with the beams on in the range of deposition and substrate temperature used for the data of Fig. 6 and with the same oven and system geometry.