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Volumn 17, Issue 4, 1970, Pages 320-335

Avalanche Injection and Second Breakdown in Transistors

Author keywords

[No Author keywords available]

Indexed keywords

E D; SEMICONDUCTOR DEVICES, DIODE; TRANSISTOR BREAKDOWN;

EID: 0014766404     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1970.16976     Document Type: Article
Times cited : (173)

References (23)
  • 1
    • 84941528906 scopus 로고
    • Failure mechanisms in silicon semiconductors
    • Shockley Research Lab., Palo Alto, Calif., Final Rept., Contract AF30(602)-3016 (AD615 312), March
    • W. Shockley, R. M.Scarlett, R. Haitz, and W. Hooper, “Failure mechanisms in silicon semiconductors,” Shockley Research Lab., Palo Alto, Calif., Final Rept., Contract AF30(602)-3016 (AD615 312), March 1965.
    • (1965)
    • Shockley, W.1    Scarlett, R.M.2    Haitz, R.3    Hooper, W.4
  • 3
    • 0009080587 scopus 로고
    • Thermal switchback in high ft epitaxial transistors
    • August/September
    • W. Steffe and J. Le Gall, “Thermal switchback in high ft epitaxial transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 635–638, August/September 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 635-638
    • Steffe, W.1    Le Gall, J.L.2
  • 4
    • 33747976134 scopus 로고
    • Some new aspects of thermal instability of the current distribution in power transistors
    • August/September
    • F. Bergmann and D. Gerstner, “Some new aspects of thermal instability of the current distribution in power transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 630–634, August/September 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 630-634
    • Bergmann, F.1    Gerstner, D.2
  • 5
    • 33645623194 scopus 로고
    • Experimental demonstration and theory of a corrective to second breakdown in Si power transistors
    • August/September
    • D. Stolnitz, “Experimental demonstration and theory of a corrective to second breakdown in Si power transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 643–648, August/September 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 643-648
    • Stolnitz, D.1
  • 6
    • 0343885628 scopus 로고
    • A survey of second breakdown
    • August/September
    • H. A. Schafft and J. C. French, “A survey of second breakdown,” IEEE Trans. Electron Devices, vol. ED-13, pp. 613–618, August/September 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 613-618
    • Schafft, H.A.1    French, J.C.2
  • 7
    • 0003277507 scopus 로고
    • Current mode second breakdown in epitaxial planar transistors
    • November
    • H. B. Grutchfield and T. J. Moutoux, “Current mode second breakdown in epitaxial planar transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 743–748, November 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 743-748
    • Grutchfield, H.B.1    Moutoux, T.J.2
  • 8
    • 0342579871 scopus 로고
    • Second breakdown in the forward and reverse base current region
    • August/September
    • R. J. Nienhuis, “Second breakdown in the forward and reverse base current region,” IEEE Trans. Electron Devices, vol. ED-13, pp. 655–662, August/September 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 655-662
    • Nienhuis, R.J.1
  • 9
    • 0742293932 scopus 로고
    • ‘Second breakdown’ in transistors
    • March
    • H. A. Schafft and J. C. French, “‘Second breakdown’ in transistors,” IRE Trans. Electron Devices, vol. ED-9, pp. 129–136, March 1962.
    • (1962) IRE Trans. Electron Devices , vol.ED-9 , pp. 129-136
    • Schafft, H.A.1    French, J.C.2
  • 10
    • 33645608741 scopus 로고
    • High electric field effects in semiconductors
    • A. F. Gibson, Ed. New York: Wiley
    • J. B. Gunn, “High electric field effects in semiconductors,” in Progress in Semiconductors, A. F. Gibson, Ed. New York: Wiley, 1957, vol. 2, pp. 213–247.
    • (1957) Progress in Semiconductors , vol.2 , pp. 213-247
    • Gunn, J.B.1
  • 11
  • 12
    • 33645613686 scopus 로고
    • The static and dynamic properties of the avalanche injection diode
    • J. R. Szedon and A. G. Jordan, “The static and dynamic properties of the avalanche injection diode,” Solid-State Electron., vol. 6, pp. 631–643, 1963.
    • (1963) Solid-State Electron. , vol.6 , pp. 631-643
    • Szedon, J.R.1    Jordan, A.G.2
  • 13
    • 0007895088 scopus 로고
    • Specific negative resistance in solids
    • B. K. Ridley, “Specific negative resistance in solids,” Proc. Phys. Soc. (London), vol. 82, pp. 954–966, 1963.
    • (1963) Proc. Phys. Soc. (London) , vol.82 , pp. 954-966
    • Ridley, B.K.1
  • 14
    • 0039935819 scopus 로고
    • Avalanche breakdown and multiplication in silicon pin junctions
    • T. Ogawa, “Avalanche breakdown and multiplication in silicon pin junctions,” Japan. J. Appl. Phys., vol. 4, pp. 473–484, 1965.
    • (1965) Japan. J. Appl. Phys. , vol.4 , pp. 473-484
    • Ogawa, T.1
  • 15
    • 0042983212 scopus 로고
    • Charge multiplication in silicon p-n junctions
    • J. L. Moll and R. Van Overstraetan, “Charge multiplication in silicon p-n junctions,” Solid-State Electron., vol. 6, pp. 147–157, 1963.
    • (1963) Solid-State Electron. , vol.6 , pp. 147-157
    • Moll, J.L.1    Van Overstraetan, R.2
  • 16
    • 84876571018 scopus 로고
    • Negative resistance and filamentary currents in avalanching silicon p+-i-n+ junctions
    • August
    • M. W. Muller and H. Guckel, “Negative resistance and filamentary currents in avalanching silicon p+-i-n+ junctions,” IEEE Trans. Electron Devices, vol. ED-15, pp. 560–568, August 1968.
    • (1968) IEEE Trans. Electron Devices , vol.ED-15 , pp. 560-568
    • Muller, M.W.1    Guckel, H.2
  • 17
    • 9744247150 scopus 로고
    • A problem in radial heat flow
    • H. Goldenberg, “A problem in radial heat flow,” Brit. J. Appl. Phys., vol. 2, pp. 233–237, 1951.
    • (1951) Brit. J. Appl. Phys. , vol.2 , pp. 233-237
    • Goldenberg, H.1
  • 18
    • 27844529214 scopus 로고
    • Avalanche breakdown in silicon
    • K. G. McKay, “Avalanche breakdown in silicon,” Phys. Rev., vol. 94, pp. 877–884, 1954.
    • (1954) Phys. Rev. , vol.94 , pp. 877-884
    • McKay, K.G.1
  • 19
    • 0014340026 scopus 로고
    • Temperature dependence of hot electron drift velocity in silicon at high electric field
    • C. Y. Duh and J. L. Moll, “Temperature dependence of hot electron drift velocity in silicon at high electric field,” Solid-State Electron., vol. 11, pp. 917–932, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 917-932
    • Duh, C.Y.1    Moll, J.L.2
  • 21
    • 34249848545 scopus 로고
    • Analysis of second breakdown in transistors using a simple model
    • November
    • H. C. Josephs, “Analysis of second breakdown in transistors using a simple model,” IEEE Trans. Electron Devices, vol. ED-13, pp. 778–787, November 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 778-787
    • Josephs, H.C.1
  • 23
    • 84914966737 scopus 로고
    • Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique
    • January
    • C. B. Norris, Jr., and J. F. Gibbons, “Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique,” IEEE Trans. Electron Devices, vol. ED-14, pp. 38–43, January 1967.
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 38-43
    • Norris, C.B.1    Gibbons, J.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.