Device Physics of TRAPATT Oscillators

IEEE Transactions on Electron Devices

Volumn ED-17, Issue 1, 1970, Pages 9-21

  De Loach, B C ^a   Scharfetter, D L ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IETDA; SEMICONDUCTOR;

EID: 0014710753     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1970.16917     Document Type: Article

References (14)

1. H. J. Prager, K. K. N. Chang, and S. Weisbrod, “High-power, high-efficiency silicon avalanche diodes at ultrahigh frequencies,” Proc. IEEE (Letters), vol. 55, pp. 586–587, April 1967; also “Anomalous silicon avalanche diodes for microwave generation,” Proc, Cornell Conf. on High Frequency Generation and Amplification (Ithaca, N.Y., August 29–31, 1967), pp. 266–280.
2. S. G. Liu and J. J. Risko, “High-power punch-through avalanche diode microwave oscillators,” presented at the Internatl. Solid State Circuits Conf., Philadelphia, Pa., February 1968. Also, S. G. Liu, IEEE J. Solid-State Circuits, vol. SC-3, pp. 213–217, September 1968.
3. R. L. Johnston and D. L. Scharfetter, “Low frequency high efficiency oscillations in germanium Impatt diodes,” presented at the IEEE Solid State Device Research Conf., June 17–19, 1968; also IEEE Trans. Electron Devices, vol. ED-16; pp. 905–911, November 1969.
4. D. L. Scharfetter, D. J. Bartelink, H. K. Gummel, and R. L. Johnston, “Computer simulation of low frequency high efficiency oscillation in germanium,” presented at the IEEE Solid State Device Research Conf., June 17–19, 1968.
5. R. L. Johnston, D. L. Scharfetter, and D. J. Bartelink, “High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency,” Proc. IEEE (Letters), vol. 56, pp. 1611–1613, September 1968.
6. D. L. Scharfetter, “High efficiency operation of Impatt diodes,” presented at the Internatl. Electron Devices Meeting, Washington D. C., October 23–25, 1968.
7. R. L. Rulison, G. Gibbons, and J. G. Josenhans, “Improved performance of Impatt diodes fabricated from Ge,” Proc. IEEE (Letters), vol. 55, pp. 223–224, February 1967.
8. D. E. Iglesias and W. J. Evans, “High-efficiency CW Impatt operation,” Proc. IEEE (Letters), vol. 56, p. 1610, September 1968.
9. M. W. Muller and H. Guckel, “Negative resistance and filamentary currents in avalanching silicon p+-i-n+ junctions,” IEEE Trans. Electron Devices, vol. ED-15, pp. 560–568, August 1968.
10. C. P. Snapp and B. Hoefflinger, “An efficient multiresonant avalanche diode oscillator in the 1.5 to 11 GHz range,” Proc. IEEE (Letters), vol. 56, pp. 2054–2055, November 1968.
11. C. P. Snapp, L. A. Stark, and B. Hoefflinger, “Performance and theory of avalanche resonance pumped Impatt oscillators,” presented at the Internatl. Electron Devices Meeting, Washington, D. C., October 1968.
12. D. J. Bartelink and D. L. Scharfetter, “Avalanche shock fronts in p-n junctions,” Appl. Phys. Letters, May 15, 1969.
13. D. L. Scharfetter, “Power-frequency characteristics of the Trapatt diode mode of high efficiency power generation in germanium and silicon avalanche diodes” (to be published).
14. R. L. Johnston and B. C. De Loach, Jr., “The transient microwave impedance of PIN diodes,” presented at the Internatl. Solid State Circuits Conf., Philadelphia, Pa., February 1965.