Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells

Semiconductors

Volumn 32, Issue 7, 1998, Pages 757-761

  Vorob'ev, L E ^a   Titkov, I E ^a   Firsov, D A ^a   Shalygin, V A ^a   Toropov, A A ^b   Shubina, T V ^b   Tulupenko, V N ^c   Towe, E ^d  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c DONBASS STATE ENGINEERING ACADEMY   (Ukraine)

^d UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013503842     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187500     Document Type: Article

References (8)

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6. L. E. Vorob'ev, E. A. Zibik, Yu. V. Kochegarov, S. N. Danilov, D. A. Firsov, E. Towe, D. Sun, A. A. Toropov, and T. V. Shibina, Fiz. Tekh. Poluprovodn. 29, 1136 (1995) [Semiconductors 29, 588 (1995)].
7. E. Towe, D. Sun, L. E. Vorobjev, S. N. Danilov, D. A. Firsov, and E. A. Zibik, Superlattices Microstruct. 17 (2), 129 (1995).
8. L. E. Vorob'ev, I. I. Saǐdashev, D. A. Firsov, and V. A. Shalygin, [JETP Lett. 65, 544 (1997)].