Study of the epitaxial lateral overgrowth (ELO) process for GaN on sapphire using scanning electron microscopy and monochromatic cathodoluminescence

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Yu, Zhonghai ^a   Johnson, M A L ^a   Mcnulty, T ^a   Brown, J D ^a   Cook Jr , J W ^a   Schetzina, J F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COALESCENCE; DISLOCATIONS (CRYSTALS); ELECTRON DENSITY MEASUREMENT; EPITAXIAL GROWTH; IMAGE PROCESSING; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; SINGLE CRYSTALS;

DISLOCATION DENSITY; EPITAXIAL LATERAL OVERGROWTH (ELO); MONOCHROMATIC CATHODOLUMINESCENCE; PHOTOMICROGRAPHS;

GALLIUM NITRIDE;

EID: 0013491366     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000788     Document Type: Article

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