Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1357-1363

  Kawamura, Ken Ichi ^a   Hosono, Hideo ^a   Kawazoe, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013417451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362935     Document Type: Article

References (34)

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