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Volumn 70, Issue 21, 1997, Pages 2819-2821

Effects of in situ doping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

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EID: 0013377824     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119207     Document Type: Article
Times cited : (8)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.