메뉴 건너뛰기




Volumn 60, Issue 24, 1999, Pages 16906-16912

Conductance suppression due to correlated electron transport in coupled double quantum dots

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0013368680     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.16906     Document Type: Article
Times cited : (11)

References (40)
  • 1
    • 85037877576 scopus 로고    scopus 로고
    • Hermann Grabert and Michel H. Devoret, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures (Plenum Press, New York, 1992).
    • Hermann Grabert and Michel H. Devoret, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures (Plenum Press, New York, 1992).
  • 3
    • 85037877636 scopus 로고    scopus 로고
    • T. Dittrich, P. Hänggi, G.-L. Ingold, B. Kramer, G. Schön, and W. Zweger, Quantum Transport and Dissipation (Wiley-VCH Verlag GmbH, Weinheim, Germany, 1998).
    • T. Dittrich, P. Hänggi, G.-L. Ingold, B. Kramer, G. Schön, and W. Zweger, Quantum Transport and Dissipation (Wiley-VCH Verlag GmbH, Weinheim, Germany, 1998).
  • 19
    • 5844278963 scopus 로고
    • Shingo Katsumoto, Naokatsu Sano, and Shun-ichi Kobayashi, Jpn. J. Appl. Phys., Part 2 31, 759 (1992).
    • (1992) Jpn. J. Appl. Phys., Part 2 , vol.31 , pp. 759
  • 22
    • 16444362077 scopus 로고    scopus 로고
    • Sangchul Oh, Kyung Wan Park, Mincheol Shin, Seongjae Lee, and El-Hang Lee, Phys. Rev. B 57, 2368 (1998).
    • (1998) Phys. Rev. B , vol.57 , pp. 2368
  • 23
    • 85037878260 scopus 로고    scopus 로고
    • Ruby Chen, A. M. Matsuoka, A. N. Korotkov, B. Harris, P. Shevchenko, and K. K. Likharev, MOSES 1.0, Monte-Carlo Single-Electronics Simulator, 1995, available from Ruby Chen, e-mail: rchen@max.physics.sunysb.edu.
    • Ruby Chen, A. M. Matsuoka, A. N. Korotkov, B. Harris, P. Shevchenko, and K. K. Likharev, MOSES 1.0, Monte-Carlo Single-Electronics Simulator, 1995, available from Ruby Chen, e-mail: rchen@max.physics.sunysb.edu.
  • 24
    • 85037881942 scopus 로고    scopus 로고
    • Christoph Wasshuber, SIMON 2.0, Single Electron Device and Circuit Simulator, 1999, http://home1.gte.net/kittypaw/simon.htm.
    • Christoph Wasshuber, SIMON 2.0, Single Electron Device and Circuit Simulator, 1999, http://home1.gte.net/kittypaw/simon.htm.
  • 25
    • 0029849866 scopus 로고    scopus 로고
    • ). This reference focuses on the behavior of a single double-dot in the transition from the weak to the strong tunneling regime while in our experiments the interaction of a pair of Coulombically coupled double-dots is studied. The tunneling conductance is low inside the double-dots while between the double-dots there is no tunneling.
    • C. Livermore, C. H. Crouch, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Science 20, 1332 (1996). This reference focuses on the behavior of a single double-dot in the transition from the weak to the strong tunneling regime while in our experiments the interaction of a pair of Coulombically coupled double-dots is studied. The tunneling conductance is low inside the double-dots while between the double-dots there is no tunneling.
    • (1996) Science , vol.20 , pp. 1332
    • Livermore, C.1    Crouch, C.H.2    Westervelt, R.M.3    Campman, K.L.4    Gossard, A.C.5
  • 26
    • 85037898360 scopus 로고    scopus 로고
    • The experimental setup of Ref. 20 is similar to that of this paper. The major difference is that Ref. 20 examines the system in the Coulomb blockade regime when tunneling is suppressed and the current comes from cotunneling, while the goal of this paper is to investigate the behavior of two capacitively coupled double-dots when the Coulomb blockade is lifted and the current is due to sequential correlated tunneling events.
    • The experimental setup of Ref. 20 is similar to that of this paper. The major difference is that Ref. 20 examines the system in the Coulomb blockade regime when tunneling is suppressed and the current comes from cotunneling, while the goal of this paper is to investigate the behavior of two capacitively coupled double-dots when the Coulomb blockade is lifted and the current is due to sequential correlated tunneling events.
  • 30
    • 85037891247 scopus 로고    scopus 로고
    • One reason for that is the high tunneling resistance. The cotunneling rate is proportional to (Formula presented) while the sequential tunneling rate is proportional to (Formula presented) thus large tunneling resistance helps suppress cotunneling. Another reason is the low source voltage (Formula presented) The cotunneling rate is proportional to the third power of (Formula presented) thus for high enough voltages it could be dominant. Finally, although to get current through the DD, tunneling to higher energy states is necessary, these transitions are never suppressed enough to make cotunneling important (at least in the cases of considerable current flow). Based on cotunneling rate computations (Ref. 3), the error due to neglecting cotunneling turns out to be always less than 5% of the maximum conductance.
    • One reason for that is the high tunneling resistance. The cotunneling rate is proportional to (Formula presented) while the sequential tunneling rate is proportional to (Formula presented) thus large tunneling resistance helps suppress cotunneling. Another reason is the low source voltage (Formula presented) The cotunneling rate is proportional to the third power of (Formula presented) thus for high enough voltages it could be dominant. Finally, although to get current through the DD, tunneling to higher energy states is necessary, these transitions are never suppressed enough to make cotunneling important (at least in the cases of considerable current flow). Based on cotunneling rate computations (Ref. 3), the error due to neglecting cotunneling turns out to be always less than 5% of the maximum conductance.
  • 31
    • 85037897873 scopus 로고    scopus 로고
    • The actual electron temperature of the device is 70 mK. This is due to extra heating of the electron subsystem and is commonly seen in transport experiments. To infer the temperature, we used the method described in Single Electron Tunneling, edited by H. Gilbert and M. H. Devoret (Plenum Press, New York, 1992), Chap. 5, p. 181.
    • The actual electron temperature of the device is 70 mK. This is due to extra heating of the electron subsystem and is commonly seen in transport experiments. To infer the temperature, we used the method described in Single Electron Tunneling, edited by H. Gilbert and M. H. Devoret (Plenum Press, New York, 1992), Chap. 5, p. 181.
  • 32
    • 85037908425 scopus 로고    scopus 로고
    • For a subsequent experimental setup the conductance lowering reached 50%. The computed transition frequency was 200 MHz.
    • For a subsequent experimental setup the conductance lowering reached 50%. The computed transition frequency was 200 MHz.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.