Electron collisional excitation of Si VIII: (1s22s22p3 4S03/2, 2D03/2,5/2, 2P01/2,3/2) fine-structure transitions

Monthly Notices of the Royal Astronomical Society

Volumn 322, Issue 4, 2001, Pages 779-784

  Bell, K L ^a   Matthews, A ^a   Ramsbottom, C A ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Atomic processes; Line: formation; Plasmas

Indexed keywords

ATOMIC PHYSICS; CALCULATIONS; COLLISIONAL PLASMAS; ELECTRON TEMPERATURE; SILICON;

AB INITIO; ATOMIC PROCESS; CLOSE COUPLING; COLLISION STRENGTH; ELECTRON-COLLISIONAL EXCITATION; ELECTRON-IMPACT EXCITATION; FINE STRUCTURE TRANSITIONS; FINE-STRUCTURE LEVELS; LINE FORMATIONS; R-MATRIX METHOD;

IMPACT IONIZATION;

EID: 0013282811     PISSN: 00358711     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-8711.2001.04183.x     Document Type: Article

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