Interfaces in silicides

Journal De Physique. IV : JP

Volumn 6, Issue 2, 1996, Pages

  D'Heurle, F M ^a,b  

^a IBM RESEARCH   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT; GRAIN BOUNDARIES; METALLURGY; NUCLEATION; OHMIC CONTACTS; SILICON COMPOUNDS; SOLID STATE PHYSICS; STACKING FAULTS; TUNGSTEN ALLOYS;

BALLISTIC ELECTRONS TRANSFER; ELECTRONIC TECHNOLOGY; METALLURGICAL PROPERTIES; RECTIFYING CONTACTS; SILICIDE FORMATION; SILICIDES; TUNGSTEN SILICIDE;

INTERFACES (MATERIALS);

EID: 0013017115     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1996205     Document Type: Article

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