Shallow junctions diffused from single- and coimplanted WSi2 films and integrated 0.2 μm complementary metal-oxide-semiconductor transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 334-338

  Liu, C T ^a   Luftman, H ^a   Chang, C P ^a   Liu, R ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012883120     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. Z. H. Liu, C. Hu, J. H. Huang, T. Y. Chan, M. C. Jeng, P. K. Ko, and Y. C. Cheng, IEEE Trans. Electron Devices 40, 86 (1993).
3. W. T. Lynch, Tech. Dig. Int. Electron Devices Meet. 354 (1987).
4. C. T. Liu, H. Luftman, W. Lin, C. P. Chang, T. S. Yang, C. C. Fu, K. H. Lee, R. Liu, and D. S. Yaney, Tech. Dig. Int. Electron Devices Meet. 437 (1993).
5. C. T. Liu, C. P. Chang, K. H. Lee, and R. Liu, IEEE Electron Device Lett. EDL-16, 363 (1995).