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Volumn 16, Issue 4, 1998, Pages 1928-1932
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On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0012815707
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.590109 Document Type: Article |
Times cited : (1)
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References (5)
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