The effects of vacuum annealing on the film properties of titanium boride (TIBx) grown on (100)Si substrate

Metals and Materials International

Volumn 7, Issue 4, 2001, Pages 359-365

  Lee, Young Ki ^a   Kim, Jung Yuel ^a   Lee, You Kee ^a   Lee, Min Sang ^b   Lee, Cheul Ro ^b   Park, Dong Koo ^c  

^a Uiduk University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Suwon University   (South Korea)

Author keywords

Interfacial reaction; Non stoichiometric TiBx film; Salicide process; Thermal stability; Vacuum annealing

Indexed keywords

ANNEALING; BORIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; SHEET RESISTANCE; SILICON; SILICON COMPOUNDS; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; VACUUM EVAPORATION;

CO-EVAPORATIONS; FILM PROPERTIES; NON-STOICHIOMETRIC; SALICIDES; SOLID PHASE REACTION; TEMPERATURE RANGE; TITANIUM BORIDE; VACUUM-ANNEALING;

TITANIUM COMPOUNDS;

EID: 0012790625     PISSN: 12259438     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf03186080     Document Type: Article

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