Interface-state density at SiO2/GaAs assessed by direct measurement of surface band bending

Applied Physics Letters

Volumn 69, Issue 20, 1996, Pages 3051-3053

  Mochizuki, Yasunori ^a   Mizuta, Masashi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012784786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116836     Document Type: Article

References (19)

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